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Decoherence and noise in High critical Temperature Superconducting quantum nanodevices

M. Arzeo

Published Jan 1, 2016• 0 citations
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Superconducting nanodevices such as qubits, resonators, and photodetectors, have revolutionized our capabilities for probing and controlling quantum phenomena. Nonequilibrium quasiparticles, which are broken Cooper pairs that cause decoherence and energy loss, can limit their performance. The number of these quasiparticles is often tens of orders of magnitude greater than would be present in thermal equilibrium. Background radiation has been shown to excite quasiparticles, but quasiparticles are observed even when the devices are carefully shielded. Here we show that the high-frequency components of 1/f noise can excite quasiparticle pairs and that this mechanism is consistent with previously unexplained experimental results. We also propose new experiments that exploit this quasiparticle excitation mechanism to non-invasively characterize high-frequency charge noise as well as the locations and nature of the defects producing the noise. The proposed experiments would also investigate how this noise changes as the defects that give rise to it evolve towards thermal equilibrium.
The growing interest in the development of nano-superconducting quantum interference devices (nanoSQUIDs) and their applications in nanoscience demands a deep study of these ultra-high-sensitivity nanodevices. In this paper, the main features of niobium planar nanointerferometers as a function of the temperature have been investigated. In particular, two types of nanodevices have been realized and studied: one based on nanobridges and the other on sub-micron Josephson tunnel junctions (JTJs). The nanobridge-based nanointerferometer, fabricated by electron beam lithography (EBL), consists of a sub-micrometric loop (effective area of 0.5 μ m 2 ), interrupted by two Dayem nanobridges having a width and length of 50 and 80 nm respectively. The JTJs-based nanointerferometer has two Nb/Al-AlO x /Nb SNIS (superconductor/normal-insulator/superconductor) junctions with an area of 0.09 μ m 2 , connected by a rectangular loop (1 μ m × 0.2 μ m), and realized by the three-dimensional focused ion beam (3D FIB) sculpting technique. For both nanodevices, measurements of current–voltage characteristics and critical current versus external magnetic flux have been performed at operating temperatures ranging from 4.2 to 1.2 K. The critical current modulation depths, magnetic flux to current transfer factor (current responsivity) and magnetic flux resolution as a function of the temperature have been evaluated for both nanosensors. Furthermore, measurements of the voltage–magnetic flux characteristics and the spectral density of magnetic flux noise have been performed at T = 4.2 K.