Quantum Electronics
Effect of layered nanostructures on the linewidth of forbidden E2 transitions
Dmitry V. Guzatov, В. В. Климов
Abstract
In the framework of classical electrodynamics, analytical expressions are derived and investigated for the linewidth of forbidden E2 transitions in an atom (molecule) located near layered metal – dielectric nanostructures. It is shown that the radiation intensity at the forbidden transition during detection in the half-space behind a layered nanostructure can significantly exceed the intensity during detection in the half-space where an atom (molecule) is located.