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Atomic vapor in photonic crystals

Philip J. Harding, Allard P. Mosk, Willem L. Vos

Published Apr 19, 2004• 0 citations
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Abstract We investigate the steady-state and dynamic behavior of the optical properties of the laser pulse in a GaAs/AlAs 1D photonic crystal (1DPC) with an atomic vapor defect layer. We chose the atomic vapor of the 87 Rb as a defect layer by driving the probe field on the D 2 transition between 5 2 P 3/2 - 5 2 S 1/2 levels through the 1DPC. The effect of the photonic bandgap (PBG) on the absorption and dispersion properties of the probe field is discussed. Moreover, the transmission and reflection coefficient of the 1DPC is controlled by applying the various value of the intensity of the coupling field. By comparing these results in the vacuum and near the PBG, we find that the absorption/dispersion and transmission/reflection properties are strongly affected by the PBG. We find that all-optical properties of atomic vapor in the surrounding of 1DPC are improved due to PBG. Furthermore, the effect of the intensity of the coupling field on the all-optical switching is studded. The proposed model may provide some new possibilities for technological applications as an all-optical device based on the photonic crystal in quantum information science, quantum computing, signal processing, and quantum communications.

Physica Scripta•Feb 1, 2022•5 citations
Using the Transfer matrix method to reserch the one-dimensional photonic crystal bandgap structure which is made of electromagnetically induced transparency atomic vapor.The results show that the photonic crystal bandgap can be manipulated by varying the refractive index of electromagnetically induced transparency atomic vapor.The EIT atomic vapor relative refractive index gradually increasing with the Rabi frequency.With the Rabi frequency gradually increasing,the band gap of the photonic crystal becomes more and more narrow,but the change is becoming slower.
Abstract We investigate the steady-state and dynamic behavior of the optical properties of the laser pulse in a GaAs/AlAs 1D photonic crystal (1DPC) with an atomic vapor defect layer. We chose the atomic vapor of the 87 Rb as a defect layer by driving the probe field on the D 2 transition between 5 2 P 3/2 - 5 2 S 1/2 levels through the 1DPC. The effect of the photonic bandgap (PBG) on the absorption and dispersion properties of the probe field is discussed. Moreover, the transmission and reflection coefficient of the 1DPC is controlled by applying the various value of the intensity of the coupling field. By comparing these results in the vacuum and near the PBG, we find that the absorption/dispersion and transmission/reflection properties are strongly affected by the PBG. We find that all-optical properties of atomic vapor in the surrounding of 1DPC are improved due to PBG. Furthermore, the effect of the intensity of the coupling field on the all-optical switching is studded. The proposed model may provide some new possibilities for technological applications as an all-optical device based on the photonic crystal in quantum information science, quantum computing, signal processing, and quantum communications.