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The Japan Society of Applied Physics

Fabrication and characterization of InSb quantum dots in a microwave circuit resonator

Yuji Yamazaki

Published Jul 8, 2014• 0 citations
OpenAlex

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By employing a micrometer precision mechanical transfer technique, we embed individual InSb nanowires into a superconducting coplanar waveguide resonator. We investigate the characteristics of a double quantum dot formed in an InSb nanowire interacting with a single mode microwave field. The charge stability diagram can be obtained from the amplitude and phase response of the resonator independently from the dc transport measurement. As the charge transits between dot-dot, or dot-lead, the change of resonator transmission is compared and the charge-cavity coupling strength is extracted to be in the magnitude of several MHz.
We develop an engineered microwave environment for coupling high Q superconducting resonators to quantum dots using a multilayer fabrication stack for dot control wiring. Analytical and numerical models are presented, which show that high resonator quality factors can be attained by either minimizing the parasitic coupling capacitance to the leads or creating a low effective environmental impedance at the cavity frequency. We implement the later approach by fabricating low characteristic impedance (Zg≈10 Ω) microstrips on-chip for the dot bias wiring and show resonator quality factors of 8140 that can be attained without the addition of explicit filtering. Using this approach, we demonstrate single electron occupation in double and triple dots detected via dipole or quadrupole coupling to a superconducting resonator. Additionally, by using multilayer fabrication, we are able to improve ground plane integrity and keep microwave crosstalk below −20 dB out to 18 GHz while maintaining high wire density, which will be necessary for future circuit quantum electrodynamics quantum dot processors.