Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

arXiv:2006.02514 · Applied Physics Letters

Microwave engineering for semiconductor quantum dots in a cQED architecture

Nathan Holman, J. P. Dodson, L. F. Edge, S. N. Coppersmith, Mark G. Friesen, R. McDermott, M. A. Eriksson

Published Aug 24, 2020• 18 citations
arXivHTMLPDF

Abstract

We develop an engineered microwave environment for coupling high Q superconducting resonators to quantum dots using a multilayer fabrication stack for dot control wiring. Analytical and numerical models are presented, which show that high resonator quality factors can be attained by either minimizing the parasitic coupling capacitance to the leads or creating a low effective environmental impedance at the cavity frequency. We implement the later approach by fabricating low characteristic impedance (Zg≈10 Ω) microstrips on-chip for the dot bias wiring and show resonator quality factors of 8140 that can be attained without the addition of explicit filtering. Using this approach, we demonstrate single electron occupation in double and triple dots detected via dipole or quadrupole coupling to a superconducting resonator. Additionally, by using multilayer fabrication, we are able to improve ground plane integrity and keep microwave crosstalk below −20 dB out to 18 GHz while maintaining high wire density, which will be necessary for future circuit quantum electrodynamics quantum dot processors.

DOI
10.1063/5.0016248

Related papers

On-Chip Microwave Filters for High-Impedance Resonators with Gate-Defined Quantum Dots

Patrick Harvey-Collard, Guoji Zheng, Jurgen Dijkema +4 more

Circuit quantum electrodynamics (QED) employs superconducting microwave resonators as quantum buses. In circuit QED with semiconductor quantum-dot-based qubits, increasing the resonator impedance is desirable as it enhances the coupling to the typically small charge dipole moment of these qubits. However, the gate electrodes necessary to form quantum dots in the vicinity of a resonator inadvertently lead to a parasitic port through which microwave photons can leak, thereby reducing the quality factor of the resonator. This is particularly the case for high-impedance resonators, as the ratio of their total capacitance over the parasitic port capacitance is smaller, leading to larger microwave leakage than for 50-x resonators. Here, we introduce an implementation of on-chip filters to suppress the microwave leakage. The filters comprise a high-kinetic-inductance nanowire inductor and a thin-film capacitor. The filter has a small footprint and can be placed close to the resonator, confining microwaves to a small area of the chip. The inductance and capacitance of the filter elements can be varied over a wider range of values than their typical spiral inductor and interdigitated capacitor counterparts. We demonstrate that the total linewidth of a 6.4 GHz and approximately 3-kx resonator can be improved down to 540 kHz using these filters.

•Jan 1, 2020•27 citations

On-Chip Microwave Filters for High-Impedance Resonators with Gate-Defined Quantum Dots

Patrick Harvey-Collard, Guoji Zheng, Jurgen Dijkema +4 more

Circuit quantum electrodynamics with qubits based on semiconductor quantum dots can enable long-range two-qubit gates between distant spins, or improve gate-based charge sensing for readout. Compared to conventional resonators, high-impedance resonators improve the coupling to the qubits, but their losses to the quantum dot's leads are also larger. This study implements on-chip filtering using high-kinetic-inductance nanowires and thin-film capacitors to mitigate this source of losses. These filters are very compact and easily extended to a large number of leads, all while preserving state-of-the-art resonator quality factors.

arXiv:2005.05411•Physical Review Applied•Sep 10, 2020•36 citations

High coherence superconducting microwave cavities with indium bump bonding

Chan U Lei, Lev Krayzman, Suhas Ganjam +2 more

Low-loss cavities are important in building high-coherence superconducting quantum computers. Generating high-quality joints between parts is crucial for the realization of a scalable quantum computer using the circuit quantum electrodynamics (cQED) framework. In this paper, we adapt the technique of indium bump bonding to cQED to realize high-quality superconducting microwave joints between chips. We use this technique to fabricate compact superconducting cavities in the multilayer microwave integrated quantum circuit (MMIQC) architecture and achieve single photon quality factors over 300 × 106 or single-photon lifetimes approaching 5 ms. To quantify the performance of the resulting seam, we fabricate microwave stripline resonators in multiple sections connected by different numbers of bonds, resulting in a wide range of seam admittances. The measured quality factors combined with the designed seam admittances allow us to bound the conductance of the seam at gseam≥2×1010/(Ω m). Such a conductance should enable the construction of micromachined superconducting cavities with a quality factor of at least a billion. These results demonstrate the capability to construct very high-quality microwave structures within the MMIQC architecture.

arXiv:2001.09216•Applied Physics Letters•Apr 13, 2020•65 citations

3D integration and measurement of a semiconductor double quantum dot with a high-impedance TiN resonator

Nathan Holman, Danna Rosenberg, D. Yost +5 more

Abstract One major challenge to scaling quantum dot qubits is the dense wiring requirements, making it difficult to envision fabricating large 2D arrays of nearest-neighbor-coupled qubits necessary for error correction. We describe a method to ameliorate this issue by spacing out the qubits using superconducting resonators facilitated by 3D integration. To prove the viability of this approach, we use integration to couple an off-chip high-impedance TiN resonator to a double quantum dot in a Si/SiGe heterostructure. Using the resonator as a dispersive gate sensor, we tune the device down to the single electron regime with an SNR = 5.36. Characterizing the individual systems shows 3D integration can be done while maintaining low-charge noise for the quantum dots and high-quality factors for the superconducting resonator (single photon QL = 2.14 × 104 with Qi ≈ 3 × 105), necessary for readout and high-fidelity two-qubit gates.

npj Quantum Information•Sep 9, 2021•43 citations

Circuit quantum electrodynamics architecture for gate-defined quantum dots in silicon

X. Mi, J. V. Cady, D. M. Zajac +3 more

We demonstrate a hybrid device architecture where the charge states in a double quantum dot (DQD) formed in a Si/SiGe heterostructure are read out using an on-chip superconducting microwave cavity. A quality factor Q = 5400 is achieved by selectively etching away regions of the quantum well and by reducing photon losses through low-pass filtering of the gate bias lines. Homodyne measurements of the cavity transmission reveal DQD charge stability diagrams and a charge-cavity coupling rate gc/2π= 23 MHz. These measurements indicate that electrons trapped in a Si DQD can be effectively coupled to microwave photons, potentially enabling coherent electron-photon interactions in silicon.

arXiv:1610.05571•Applied Physics Letters•Jan 23, 2017•94 citations

High-impedance superconducting resonators and on-chip filters for circuit quantum electrodynamics with semiconductor quantum dots

X. Zhang, Zhiyong Zhu, N. Phuan Ong +1 more

Spin-photon coupling presents an enticing opportunity for the long-range coupling of spin qubits. The spin-photon coupling rate, ${g}_{s}$, is proportional to the charge-photon coupling rate, ${g}_{c}$. To move deeper into the strong-coupling regime, ${g}_{c}$ can be enhanced by fabricating high-impedance cavities using high-kinetic-inductance films. Here, we report dc transport and microwave response investigations of niobium nitride ($\mathrm{Nb}\mathrm{N}$) films of different thicknesses. The kinetic inductance increases rapidly as the film thickness is reduced below 50 nm and for 15-nm $\mathrm{Nb}\mathrm{N}$ films we measure a sheet kinetic inductance ${L}_{k,S}=41.2\phantom{\rule{0.2em}{0ex}}\text{pH}/◻$. As an application of the high-kinetic-inductance films, we fabricate compact $LC$ filters that are commonly used to reduce microwave leakage in circuit quantum electrodynamics (cQED) devices. These filters feature up to 60 dB of attenuation near typical cavity resonance frequencies of ${f}_{c}=8$ GHz.

arXiv:2306.16499•Physical Review Applied•Jan 11, 2024•8 citations
We develop an engineered microwave environment for coupling high Q superconducting resonators to quantum dots using a multilayer fabrication stack for dot control wiring. Analytical and numerical models are presented, which show that high resonator quality factors can be attained by either minimizing the parasitic coupling capacitance to the leads or creating a low effective environmental impedance at the cavity frequency. We implement the later approach by fabricating low characteristic impedance (Zg≈10 Ω) microstrips on-chip for the dot bias wiring and show resonator quality factors of 8140 that can be attained without the addition of explicit filtering. Using this approach, we demonstrate single electron occupation in double and triple dots detected via dipole or quadrupole coupling to a superconducting resonator. Additionally, by using multilayer fabrication, we are able to improve ground plane integrity and keep microwave crosstalk below −20 dB out to 18 GHz while maintaining high wire density, which will be necessary for future circuit quantum electrodynamics quantum dot processors.
Circuit quantum electrodynamics (QED) employs superconducting microwave resonators as quantum buses. In circuit QED with semiconductor quantum-dot-based qubits, increasing the resonator impedance is desirable as it enhances the coupling to the typically small charge dipole moment of these qubits. However, the gate electrodes necessary to form quantum dots in the vicinity of a resonator inadvertently lead to a parasitic port through which microwave photons can leak, thereby reducing the quality factor of the resonator. This is particularly the case for high-impedance resonators, as the ratio of their total capacitance over the parasitic port capacitance is smaller, leading to larger microwave leakage than for 50-x resonators. Here, we introduce an implementation of on-chip filters to suppress the microwave leakage. The filters comprise a high-kinetic-inductance nanowire inductor and a thin-film capacitor. The filter has a small footprint and can be placed close to the resonator, confining microwaves to a small area of the chip. The inductance and capacitance of the filter elements can be varied over a wider range of values than their typical spiral inductor and interdigitated capacitor counterparts. We demonstrate that the total linewidth of a 6.4 GHz and approximately 3-kx resonator can be improved down to 540 kHz using these filters.
Circuit quantum electrodynamics with qubits based on semiconductor quantum dots can enable long-range two-qubit gates between distant spins, or improve gate-based charge sensing for readout. Compared to conventional resonators, high-impedance resonators improve the coupling to the qubits, but their losses to the quantum dot's leads are also larger. This study implements on-chip filtering using high-kinetic-inductance nanowires and thin-film capacitors to mitigate this source of losses. These filters are very compact and easily extended to a large number of leads, all while preserving state-of-the-art resonator quality factors.
Low-loss cavities are important in building high-coherence superconducting quantum computers. Generating high-quality joints between parts is crucial for the realization of a scalable quantum computer using the circuit quantum electrodynamics (cQED) framework. In this paper, we adapt the technique of indium bump bonding to cQED to realize high-quality superconducting microwave joints between chips. We use this technique to fabricate compact superconducting cavities in the multilayer microwave integrated quantum circuit (MMIQC) architecture and achieve single photon quality factors over 300 × 106 or single-photon lifetimes approaching 5 ms. To quantify the performance of the resulting seam, we fabricate microwave stripline resonators in multiple sections connected by different numbers of bonds, resulting in a wide range of seam admittances. The measured quality factors combined with the designed seam admittances allow us to bound the conductance of the seam at gseam≥2×1010/(Ω m). Such a conductance should enable the construction of micromachined superconducting cavities with a quality factor of at least a billion. These results demonstrate the capability to construct very high-quality microwave structures within the MMIQC architecture.
Abstract One major challenge to scaling quantum dot qubits is the dense wiring requirements, making it difficult to envision fabricating large 2D arrays of nearest-neighbor-coupled qubits necessary for error correction. We describe a method to ameliorate this issue by spacing out the qubits using superconducting resonators facilitated by 3D integration. To prove the viability of this approach, we use integration to couple an off-chip high-impedance TiN resonator to a double quantum dot in a Si/SiGe heterostructure. Using the resonator as a dispersive gate sensor, we tune the device down to the single electron regime with an SNR = 5.36. Characterizing the individual systems shows 3D integration can be done while maintaining low-charge noise for the quantum dots and high-quality factors for the superconducting resonator (single photon QL = 2.14 × 104 with Qi ≈ 3 × 105), necessary for readout and high-fidelity two-qubit gates.
We demonstrate a hybrid device architecture where the charge states in a double quantum dot (DQD) formed in a Si/SiGe heterostructure are read out using an on-chip superconducting microwave cavity. A quality factor Q = 5400 is achieved by selectively etching away regions of the quantum well and by reducing photon losses through low-pass filtering of the gate bias lines. Homodyne measurements of the cavity transmission reveal DQD charge stability diagrams and a charge-cavity coupling rate gc/2π= 23 MHz. These measurements indicate that electrons trapped in a Si DQD can be effectively coupled to microwave photons, potentially enabling coherent electron-photon interactions in silicon.
Spin-photon coupling presents an enticing opportunity for the long-range coupling of spin qubits. The spin-photon coupling rate, gs{g}_{s}gs​, is proportional to the charge-photon coupling rate, gc{g}_{c}gc​. To move deeper into the strong-coupling regime, gc{g}_{c}gc​ can be enhanced by fabricating high-impedance cavities using high-kinetic-inductance films. Here, we report dc transport and microwave response investigations of niobium nitride (NbN\mathrm{Nb}\mathrm{N}NbN) films of different thicknesses. The kinetic inductance increases rapidly as the film thickness is reduced below 50 nm and for 15-nm NbN\mathrm{Nb}\mathrm{N}NbN films we measure a sheet kinetic inductance Lk,S=41.2pH/◻{L}_{k,S}=41.2\phantom{\rule{0.2em}{0ex}}\text{pH}/◻Lk,S​=41.2pH/◻. As an application of the high-kinetic-inductance films, we fabricate compact LCLCLC filters that are commonly used to reduce microwave leakage in circuit quantum electrodynamics (cQED) devices. These filters feature up to 60 dB of attenuation near typical cavity resonance frequencies of fc=8{f}_{c}=8fc​=8 GHz.