Springer series in chemical physics

Dephasing of Inter-Landau level Raman Coherences in GaAs quantum wells

Keshav Dani, Ingrid Cotoros, Jigang Wang, J. Tignon, D. S. Chemla, Eleftheria Kavousanaki, Ilias Perakis

Published Jan 1, 2007• 0 citations

Publisher

DOI: 10.1007/978-3-540-68781-8_222

Related papers

Coherent Raman scattering from electron spin coherence in GaAs quantum wells

Phedon Palinginis, Hailin Wang

Journal of Magnetism and Magnetic MaterialsJan 22, 20046 citations

Coherent control of dephasing process and many-body interactions among excitons in GaAs multiple quantum wells

Yoshihiro Ogawa, F. Minami, Naokatsu Yamamoto

Journal of LuminescenceMay 14, 20093 citations

Non-Markovian dephasing of excitons in GaAs quantum wells

A. Iwamatsu, Yoshihiro Ogawa, Yasuyoshi Mitsumori +1 more

Journal of LuminescenceMar 21, 20063 citations

Pure dephasing induced by exciton–phonon interactions in narrow GaAs quantum wells

Xudong Fan, T. Takagahara, J. E. Cunningham +1 more

Solid State CommunicationsNov 1, 199890 citations

Correlation coefficient for dephasing of light-hole excitons and heavy-hole excitons in GaAs quantum wells

Amelia G. VanEngen Spivey, Camelia Nicoleta Borca, Steven T. Cundiff

Solid State CommunicationsNov 26, 200713 citations

Dephasing of the LH-HH exciton Raman coherence in GaAs quantum wells: distinguishing between phonon and carrier scattering

Amelia G. VanEngen Spivey, Cecilia Borca, Steven T. Cundiff

Three-beam four-wave mixing shows anti-correlated scattering of HH and LH excitons in GaAs/AlGaAs quantum wells, suggesting that exciton-phonon scattering dominates the exciton dephasing. The correlation increases at higher excitation densities.

Quantum Electronics and Laser Science ConferenceDec 10, 20050 citations