We have developed and used transient three-pulse differential absorption spectroscopy to probe and control the fifth order nonlinear optical response induced by electron spin coherence in GaAs quantum wells.

Quantum Electronics and Laser Science ConferenceDec 10, 20051 citation

Journal of Magnetism and Magnetic Materials

Coherent Raman scattering from electron spin coherence in GaAs quantum wells

Phedon Palinginis, Hailin Wang

Published Jan 22, 2004• 6 citations

Publisher

DOI: 10.1016/j.jmmm.2003.12.1186

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We report the experimental demonstration of coherent Raman resonance from electron spin coherence in

\mathrm{GaAs}

quantum wells. Coherent Raman resonance, which is a precursor for electromagnetically induced transparency, appears in the differential transmission response from localized excitons in an external magnetic field applied in Voigt geometry. The spectral domain spin study reveals that the optical processes involved differ from those in the transient domain, leading to distinct polarization and intensity dependences.

The spin-flip Raman scattering efficiency of the resident electron is thermally enhanced in singly charged (In,Ga)As/GaAs quantum dots, for probing the

s

- or

p

-shell trions. The Raman shift, polarization characteristics, and spectral position of the resonant scattering profile are insensitive to the sample temperature up to 50 K. This indicates a thermally robust mechanism of the coherent electron spin-flip based on exchange interaction. The background of the scattering spectra, whose intensity increases also by about one order of magnitude with temperature, is associated with acoustic phonon scattering. We propose that acoustic phonons enhance the spin-flip probability of the resident electron with growing temperature. The coherent spin-flip Raman scattering is ultimately suppressed at temperatures, which are a few times lower than that required for thermal trion dissociation.