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The Japan Society of Applied Physics

Pump-energy dependence of exciton quantum beat in semiconductor quantum wells

Osamu Kojima

Published Feb 6, 2015• 0 citations
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Semiconductor Science and Technology•Mar 1, 1997•8 citations
We study the induced absorption due to biexciton formation in absorption bleaching pump-probe signals and the quantum beats between exciton and biexciton in the four-wave-mixing signals. The origin is confirmed by the polarization dependence of the signals in both experiments. The definite discrimination between exciton-biexciton quantum beats and the others by the polarization choices is demonstrated clearly. We also show the well-width dependence of the biexciton binding energy that is determined by the period of the quantum beats in the range of well width 45--150 \AA{} of GaAs/Alx{\mathrm{Al}}_{\mathrm{x}}Alx​${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$As (x=0.3--1.0) multiple quantum wells.
We perform femtosecond spectrally resolved pump-probe differential reflectivity measurements on excitons in GaAs quantum wells in both coherent and incoherent regimes. The spectral signal is nonzero and oscillatory at $\ensuremath{-}\mathrm{ve}$ delay up to a few ps indicating persistent coherence between excitonic polarization induced by the probe pulse and the delayed pump pulse. The signal for small +ve+ve+ve and $\ensuremath{-}\mathrm{ve}$ delay $(\ensuremath{\tau})$ shows modulation caused by quantum beats due to coexcitation of heavy and light hole excitons. The rise of the signal with $\ensuremath{\tau}$ for $\ensuremath{\tau}<0$ is rather nonexponential and is sensitive to detuning of the detection energy with respect to the exciton energy. The signal decay with $\ensuremath{\tau}$ for small +ve+ve+ve $\ensuremath{\tau}$ shows dependence on pump-probe relative polarization. The excitonic reflectivity shows a large reduction caused by excitonic absorption saturation for both +ve+ve+ve and $\ensuremath{-}\mathrm{ve}$ $\ensuremath{\tau}$ when the pump pulse intensity is increased to large values. To compare the experimental results with theory, we obtain an expression for the PPDR signal in terms of the third order excitonic polarization. This has an additional term not considered earlier to describe pump-probe experiments. The calculations are performed using optical Bloch equations, modified to incorporate exciton inhomogeneous broadening, quantum beats, and many body effects such as local field, excitation induced energy shift, and dephasing. These effects are found essential in explaining the observed PPDR spectral data. The delay dependence of the signal near the exciton energy is mainly controlled by inhomogeneous broadening for $\ensuremath{-}\mathrm{ve}$ $\ensuremath{\tau}.$ The signal decay for large +ve+ve+ve $\ensuremath{\tau}$ has an exponential behavior determined by the lifetime of incoherent excitons. Experiments for collinear polarization reveal an additional exponential component for small +ve+ve+ve delay. Theoretically, this is found to be related to exciton dephasing and is present only when many body effects are included.
We investigate the four-wave mixing response of semiconductor quantum wells having a predominantly inhomogeneous broadening of the exciton states. The influence of the biexcitons on the nonlinear emission, in proximity to the lowest exciton resonance, is studied. Using about 1 ps long pulses, we show that biexcitons are created for all excitation energies lying within the broadened exciton absorption line, and that their binding energy does not depend on the exciton energy. Reducing the temporal width of cross-linearly polarized incident laser fields to about 0.1 ps, we observe a drastic changeover from a prompt response to a photon echo, and quite interesting beating phenomena, visible in time-integrated as well as in time-resolved experiments, appear. Our observations compare well with the numerical solutions of the optical Bloch equations for a five-level scheme. The influence of the inhomogeneous broadening on the beating phenomena is discussed.