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Conference on Lasers and Electro-Optics

New color centers in diamond for long distance quantum communication

Brendon C. Rose, Ding Huang, Alexei M. Tyryshkin, Sorawis Sangtawesin, Srikanth J. Srinivasan, Daniel J. Twitchen, Matthew Markham, Andrew Mark Edmonds, Ádám Gali, Alastair D. Stacey, Wuyi Wang, Ulrika F. S. D’Haenens-Johansson, Alexander M. Zaitsev, S. A. Lyon, Nathalie P. de Leon

Published Jan 1, 2017• 0 citations
Publisher

Abstract

Color centers in diamond are a promising platform for quantum communication, as they can serve as solid state quantum memories with efficient optical transitions. Much recent attention has focused on the negatively charged NV center in diamond, which has a spin triplet ground state electronic configuration that can be measured and initialized optically, exhibits long spin coherence times at room temperature, and has narrow, spin-conserving optical transitions. However, the NV center exhibits a large static and dynamic inhomogeneous linewidth, and over 97% of its emission is in a broad, incoherent phonon side band, severely limiting scalability. Alternatively, the negatively charged SiV center exhibits excellent optical properties, with 70% of its emission in the zero phonon line and a narrow inhomogeneous linewidth. However, SiV− suffers from short electron spin coherence times, limited by an orbital relaxation rate (T1) of around 40 ns at 5 K.

DOI
10.1364/cleo_si.2017.sm1k.1

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Color centers in diamond are a promising platform for quantum communication, as they can serve as solid state quantum memories with efficient optical transitions. Much recent attention has focused on the negatively charged NV center in diamond, which has a spin triplet ground state electronic configuration that can be measured and initialized optically, exhibits long spin coherence times at room temperature, and has narrow, spin-conserving optical transitions. However, the NV center exhibits a large static and dynamic inhomogeneous linewidth, and over 97% of its emission is in a broad, incoherent phonon side band, severely limiting scalability. Alternatively, the negatively charged SiV center exhibits excellent optical properties, with 70% of its emission in the zero phonon line and a narrow inhomogeneous linewidth. However, SiV− suffers from short electron spin coherence times, limited by an orbital relaxation rate (T1) of around 40 ns at 5 K.
Atomic‐scale impurity spins, also called color centers, in an otherwise spin‐free diamond host lattice have proven to be versatile tools for applications in solid‐state‐based quantum technologies ranging from quantum information processing (QIP) to quantum‐enhanced sensing and metrology. Due to its wide band gap, diamond can host hundreds of different color centers. However, their suitability for QIP or sensing applications has only been tested for a handful of these, with the nitrogen vacancy (NV) strongly dominating this field of research. Due to its limited optical properties, the success of the NV for QIP applications however strongly depends on the development of efficient photonic interfaces. In the past years the negatively charged silicon vacancy (SiV−) center received significant attention due to its highly favourable spectral properties such as narrow zero phonon line transitions and weak phonon sidebands. Here, the recent work investigating the SiV center's orbital and electron spin coherence properties is reviewed as well as techniques to coherently control its quantum state using microwave as well as optical fields. Also, potential future experimental directions to improve the SiV's coherence time scale and to develop it into a valuable tool for QIP applications are outlined.
The negatively charged silicon-vacancy (SiV^{-}) color center in diamond has recently emerged as a promising system for quantum photonics. Its symmetry-protected optical transitions enable the creation of indistinguishable emitter arrays and deterministic coupling to nanophotonic devices. Despite this, the longest coherence time associated with its electronic spin achieved to date (∼250 ns) has been limited by coupling to acoustic phonons. We demonstrate coherent control and suppression of phonon-induced dephasing of the SiV^{-} electronic spin coherence by 5 orders of magnitude by operating at temperatures below 500 mK. By aligning the magnetic field along the SiV^{-} symmetry axis, we demonstrate spin-conserving optical transitions and single-shot readout of the SiV^{-} spin with 89% fidelity. Coherent control of the SiV^{-} spin with microwave fields is used to demonstrate a spin coherence time T_{2} of 13 ms and a spin relaxation time T_{1} exceeding 1 s at 100 mK. These results establish the SiV^{-} as a promising solid-state candidate for the realization of quantum networks.
Color centers in diamond have attracted much interest as candidates for optically active, solid-state quantum bits. Of particular interest are inversion-symmetric color centers based on group-IV impurities in diamond because they emit strongly into their zero-phonon lines and are insensitive to electric field noise to first order. Early studies of the negatively charged tin-vacancy (${\mathrm{SnV}}^{\ensuremath{-}}$) center in diamond have found the ${\mathrm{SnV}}^{\ensuremath{-}}$ to be a promising candidate: it has high quantum efficiency, emits strongly into its zero-phonon lines, and is expected to have a long T2{T}_{2}T2​ spin coherence time at 4 K. To develop the ${\mathrm{SnV}}^{\ensuremath{-}}$ into a spin qubit requires further characterization, especially of the spin and optical properties of individual ${\mathrm{SnV}}^{\ensuremath{-}}$ in nanofabricated structures. In this work, we isolate single ${\mathrm{SnV}}^{\ensuremath{-}}$ centers in diamond nanopillars and characterize their emission properties and their spin response to a magnetic field. We observe narrow emission linewidths <250<250<250 MHz, as well as a strong polarization dependence of each transition. We also find the Zeeman splitting under a magnetic field to be in good agreement with theoretical prediction. Our results pave the way toward future employment of single ${\mathrm{SnV}}^{\ensuremath{-}}$ centers as optically accessible quantum memories.
Color centers in diamond are versatile solid state atomic-like systems suitable for quantum technological applications. In particular, the negatively charged silicon vacancy center (SiV) exhibits a narrow photoluminescence (PL) line and lifetime-limited linewidth in a bulk at cryogenic temperature. We present a low-temperature study of chemical vapour deposition (CVD)-grown diamond nano-pyramids containing SiV centers. The PL spectra feature a bulk-like zero-phonon line with ensembles of SiV centers, with a linewidth below 10 GHz which demonstrates very low crystal strain for such a nano-object.
The negatively charged nitrogen-vacancy (N-V(-)) color center in diamond is an important solid-state single photon source for applications to quantum communication and distributed quantum computation. Its full usefulness relies on sufficient radiative emission of the optical photons which requires realizable control to enhance emission into the zero-phonon line (ZPL) but until now is still a challenge. Detailed understanding of the associated excitation process would be of essential importance for such objective. Here we report a theoretical work that probes the spin-conserving optical excitation of the N-V(-) center. Using density-functional-theory (DFT) calculations, we find that the ZPL and the phonon-side band (PSB) depend sensitively on the axial strain of the system. Besides, we find a relatively small PSB appearing at about 100 GPa in the emission spectrum at low temperatures, which provides a means to enhance the coherent emission of the N-V(-) center in quantum optical networks.
We demonstrate optical spin polarization of the neutrally charged silicon-vacancy defect in diamond (SiV^{0}), an S=1 defect which emits with a zero-phonon line at 946 nm. The spin polarization is found to be most efficient under resonant excitation, but nonzero at below-resonant energies. We measure an ensemble spin coherence time T_{2}>100 μs at low-temperature, and a spin relaxation limit of T_{1}>25 s. Optical spin-state initialization around 946 nm allows independent initialization of SiV^{0} and NV^{-} within the same optically addressed volume, and SiV^{0} emits within the telecoms down-conversion band to 1550 nm: when combined with its high Debye-Waller factor, our initial results suggest that SiV^{0} is a promising candidate for a long-range quantum communication technology.