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Interface dipole induced by asymmetric exchange effect in Mott-insulator/Mott-insulator heterojunction

郝雷, 汪军

中国物理B：英文版Jan 1, 20080 citations

Critical behaviour near the metal-insulator transition of a doped Mott insulator

Yūichi Ono, R. Bulla, Alex C. Hewson +1 more

arXiv:cond-mat/0103315The European Physical Journal BAug 1, 200122 citations

Doping the interface of Mott-Insulator heterostructures

Wei‐Cheng Lee, T. Pereg-Barnea, Allan H. MacDonald

Bulletin of the American Physical SocietyMar 6, 20070 citations

Evolution of Electronic Structure of Doped Mott Insulators: Reconstruction of Poles and Zeros of Green’s Function

志朗酒井, Yukitoshi Motome, Masatoshi Imada

We study the evolution of metals from Mott insulators in the carrier-doped 2D Hubbard model using a cluster extension of the dynamical mean-field theory. While the conventional metal is simply characterized by the Fermi surface (pole of the Green function G), interference of the zero surfaces of G with the pole surfaces becomes crucial in the doped Mott insulators. Mutually interfering pole and zero surfaces are dramatically transferred over the Mott gap, when lightly doped holes synergetically loosen the doublon-holon binding. The heart of the Mott physics such as the pseudogap, hole pockets, Fermi arcs, in-gap states, Lifshitz transitions, and non-Fermi liquids appears as natural consequences of this global interference in the frequency space.We study the evolution of metals from Mott insulators in the carrier-doped 2D Hubbard model using a cluster extension of the dynamical mean-field theory. While the conventional metal is simply characterized by the Fermi surface (pole of the Green function G), interference of the zero surfaces of G with the pole surfaces becomes crucial in the doped Mott insulators. Mutually interfering pole and zero surfaces are dramatically transferred over the Mott gap, when lightly doped holes synergetically loosen the doublon-holon binding. The heart of the Mott physics such as the pseudogap, hole pockets, Fermi arcs, in-gap states, Lifshitz transitions, and non-Fermi liquids appears as natural consequences of this global interference in the frequency space.

arXiv:0809.0950Physical Review LettersFeb 4, 2009206 citations

Renewed Understanding on Doped Mott Insulators

Masatoshi Imada

Bulletin of the American Physical SocietyMar 25, 20110 citations

Doping-induced States in the Single-particle Spectrum Originating from Magnetic Excitation of a Mott Insulator

Masanori Kohno

By infinitesimal doping of a Mott insulator, states are induced in the Mott gap in the single- particle spectrum. To clarify the nature of these states, their relationships with the magnetically excited states of the Mott insulator are investigated. By using the commutator between the Hamiltonian and an electron creation operator of the t-J model, it is shown that the doping- induced states generally have considerable overlaps with the magnetically excited states of the Mott insulator. In addition, the electron-addition spectral weight of spin-1 states from the spin- 1/2 ground state is shown to be three times as large as that of spin-0 states in the t-J model. These results imply that the doping-induced states in the small-doping limit of a continuous Mott transition can generally be interpreted as essentially the magnetically excited states of the Mott insulator which exhibit the momentum-shifted magnetic dispersion relation primarily outside the free-electron Fermi surface in the electron-addition spectrum following the doping. This picture is supported by numerical results for the one- and two-dimensional t-J models.By infinitesimal doping of a Mott insulator, states are induced in the Mott gap in the single- particle spectrum. To clarify the nature of these states, their relationships with the magnetically excited states of the Mott insulator are investigated. By using the commutator between the Hamiltonian and an electron creation operator of the t-J model, it is shown that the doping- induced states generally have considerable overlaps with the magnetically excited states of the Mott insulator. In addition, the electron-addition spectral weight of spin-1 states from the spin- 1/2 ground state is shown to be three times as large as that of spin-0 states in the t-J model. These results imply that the doping-induced states in the small-doping limit of a continuous Mott transition can generally be interpreted as essentially the magnetically excited states of the Mott insulator which exhibit the momentum-shifted magnetic dispersion relation primarily outside the free-electron Fermi surface in the electron-addition spectrum following the doping. This picture is supported by numerical results for the one- and two-dimensional t-J models.

Physics ProcediaJan 1, 201511 citations

Electronic reconstruction of doped Mott insulator heterojunctions

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