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Conference on Lasers and Electro-Optics

Frequency-Domain Measurement of Spontaneous Emission Lifetime in Rare-Earth-Doped Gain Media

Emir Salih Magden, Patrick T. Callahan, Nanxi Li, Katia Shtyrkova, Alfonso Ruocco, Neetesh Singh, Ming Xin, Diedrik Vermeulen, Jonathan D. B. Bradley, Gerald Leake, Douglas D. Coolbaugh, L. A. Kolodziejski, Franz X. Käertner, Erich P. Ippen, Michael R. Watts

Published Jan 1, 2017• 0 citations
Publisher

Abstract

The spontaneous emission lifetime in Al2O3:Tm3+ waveguides is measured to be 568 ± 48 µs, using a frequency-domain method. The method is studied and verified in Er3+-doped silica fiber, yielding a measured lifetime of 9.73 ± 0.08 ms.
DOI
10.1364/cleo_si.2017.sm1k.3

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The spontaneous emission lifetime and intensity of Er implanted into SiO2{\mathrm{SiO}}_{2}SiO2​ is modified by a Si/SiO2{\mathrm{SiO}}_{2}SiO2​ planar microcavity. The cavity strongly affects the coupling of the optically excited Er3+{\mathrm{Er}}^{3+}Er3+ to the radiative and waveguiding modes of the system, resulting in a spontaneous lifetime of 14.8 ms for a cavity off-resonance with the Er3+{\mathrm{Er}}^{3+}Er3+ versus a lifetime of 9.1 ms for an on-resonance cavity. The observed spontaneous emission lifetime changes agree well with calculated values based on a computation method which is also presented.
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