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Springer eBooks

Barrier/Electrode Interface Structure and I–V Characteristics of NbN Josephson Junctions

Masaru Igarashi, Makoto Hikita, Koji Takei

Published Jan 1, 1984• 5 citations
Publisher
DOI
10.1007/978-1-4613-9868-4_60

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All-NbN Josephson tunnel junctions with sputter-deposited magnesium oxide barriers have been fabricated using single-crystal NbN films for the base electrodes. Fabricated Josephson junctions have shown good tunneling characteristics with large gap voltages (5.6-5.8 mV), narrow gap widths (0.1-0.2 mV, from 30 to 70%), and small subgap leakage currents (V/sub m/=20-30 mV, measured at 3 mV). The results of a measurement of a subgap structure for a fabricated junction suggest that the excess leakage currents of fabricated junctions are due to multiparticle tunneling through locally thin areas in the MgO barriers.

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Abstract In this work, we present a detailed study of the electrical properties of stacked NbN/(TaN/NbN) N Josephson junctions. Cross-sectional scanning transmission electron microscopy analysis of the 5-stacked junction shows that the multilayer interface is very flat, each barrier has the same thickness, and the sidewalls of the junctions are nearly perpendicular to the substrate. Stacked junctions of different sizes and stacking numbers all have only one transition in their current–voltage curves. This indicates that the critical currents of the junctions in the stacked junctions are almost the same, showing the stability and repeatability of the multilayer fabrication and etching process. At 4.2 K, the 4-stacked junction shows excellent Josephson properties with characteristic voltage V c of 3.54 mV, which is about four times the 0.88 mV of the single junction. The temperature dependence of critical current density J c and V c of the stacked junction with N = 1, 2, 4 were measured, all of which can be fitted with dirty-limit theory. Stacked junctions with larger V c or more stacked layers can be achieved by optimizing electrode and barrier thickness, barrier resistivity, and thermal relaxation rate, etc.

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Microscopic inhomogeneity within superconducting films is a critical bottleneck hindering the performance and scalability of quantum circuits. All-nitride Josephson Junctions (JJs) have attracted substantial attention for their potential to provide enhanced coherence times and enable higher temperature operation. However, their performance is often limited by local variations caused by polymorphism, impurities, and interface quality. This work diagnoses atomic-scale limitations preventing superconducting NbN/AlN/NbN JJs from reaching their full potential. Electrical measurements reveal suppressed critical current density and soft onset of quasiparticle current. However, inverse proportionality between resistance and junction area confirms homogenous barrier thickness. This isolates structural and chemical variations in electrodes and barrier as the source of performance limitation. The observed characteristics are attributed to complex materials problems: NbN polymorphism, phase coexistence, and oxygen impurities. Using advanced microscopy and machine learning integrated approach, nanoscale inclusions of epsilon-Nb2N2 are found to coexist within dominant delta-NbN electrodes. DC performance of JJs may be affected by these defects, leading to unresolved supercurrent and soft transition to normal state. By identifying specific atomic scale defects, tracing its origin to initial film nucleation, and linking to its detrimental electrical signature, this work establishes a material-to-device correlation and provides targeted strategy for phase engineering towards reproducible, high coherence and scalable quantum devices.

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NBN BASED JOSEPHSON JUNCTIONS

Alexandre Shoji

De Gruyter eBooks•Dec 31, 1986•5 citations
All-NbN Josephson tunnel junctions with sputter-deposited magnesium oxide barriers have been fabricated using single-crystal NbN films for the base electrodes. Fabricated Josephson junctions have shown good tunneling characteristics with large gap voltages (5.6-5.8 mV), narrow gap widths (0.1-0.2 mV, from 30 to 70%), and small subgap leakage currents (V/sub m/=20-30 mV, measured at 3 mV). The results of a measurement of a subgap structure for a fabricated junction suggest that the excess leakage currents of fabricated junctions are due to multiparticle tunneling through locally thin areas in the MgO barriers.
Abstract In this work, we present a detailed study of the electrical properties of stacked NbN/(TaN/NbN) N Josephson junctions. Cross-sectional scanning transmission electron microscopy analysis of the 5-stacked junction shows that the multilayer interface is very flat, each barrier has the same thickness, and the sidewalls of the junctions are nearly perpendicular to the substrate. Stacked junctions of different sizes and stacking numbers all have only one transition in their current–voltage curves. This indicates that the critical currents of the junctions in the stacked junctions are almost the same, showing the stability and repeatability of the multilayer fabrication and etching process. At 4.2 K, the 4-stacked junction shows excellent Josephson properties with characteristic voltage V c of 3.54 mV, which is about four times the 0.88 mV of the single junction. The temperature dependence of critical current density J c and V c of the stacked junction with N = 1, 2, 4 were measured, all of which can be fitted with dirty-limit theory. Stacked junctions with larger V c or more stacked layers can be achieved by optimizing electrode and barrier thickness, barrier resistivity, and thermal relaxation rate, etc.
Microscopic inhomogeneity within superconducting films is a critical bottleneck hindering the performance and scalability of quantum circuits. All-nitride Josephson Junctions (JJs) have attracted substantial attention for their potential to provide enhanced coherence times and enable higher temperature operation. However, their performance is often limited by local variations caused by polymorphism, impurities, and interface quality. This work diagnoses atomic-scale limitations preventing superconducting NbN/AlN/NbN JJs from reaching their full potential. Electrical measurements reveal suppressed critical current density and soft onset of quasiparticle current. However, inverse proportionality between resistance and junction area confirms homogenous barrier thickness. This isolates structural and chemical variations in electrodes and barrier as the source of performance limitation. The observed characteristics are attributed to complex materials problems: NbN polymorphism, phase coexistence, and oxygen impurities. Using advanced microscopy and machine learning integrated approach, nanoscale inclusions of epsilon-Nb2N2 are found to coexist within dominant delta-NbN electrodes. DC performance of JJs may be affected by these defects, leading to unresolved supercurrent and soft transition to normal state. By identifying specific atomic scale defects, tracing its origin to initial film nucleation, and linking to its detrimental electrical signature, this work establishes a material-to-device correlation and provides targeted strategy for phase engineering towards reproducible, high coherence and scalable quantum devices.