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The Japan Society of Applied Physics

Toward quantum authentication with an NV center in diamond.

Koyo Kuramitani, Yuta Suda, Yuusei Goto, Yuhei Sekiguchi, K. Satô, Takaaki Nakamura, Naoki Ishida, Kodai Nagata, Hideo Kosaka

Published Feb 3, 2017• 0 citations
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Abstract The nitrogen-vacancy (NV) center in diamond is the most promising candidate for quantum sensing because of its beneficial properties. For quantum-sensing applications, a shallow NV center is critical for approximating the sensing target on a diamond surface. Such shallow NV centers are strongly affected by the diamond surface termination. The properties of shallow NV centers in hydrogen-, oxygen-, and fluorine-terminated diamond have been well studied. In recent years, silicon-terminated diamond has also been investigated; however, the effect of silicon-terminated diamond on the properties of shallow NV centers remains unclear. Recently, the suitability of nitrogen-terminated diamond for shallow NV centers has been theoretically and experimentally examined; however, quantum sensing has not yet been performed. In this work, we evaluated the effect of silicon and nitrogen termination on shallow NV centers. The negatively charged state of shallow NV centers was unstable below silicon termination. In contrast, the properties of shallow NV centers in nitrogen-terminated diamond were satisfactory for quantum sensing and enabled 1H NMR detection. Our results are in good agreement with previous reports on silicon and nitrogen terminations and provide the perspective that the stability of shallow NV centers highly depends on the polarity of electron affinity of the diamond surface.
Nitrogen-vacancy (NV) centers in diamond photonic nanostructures have attracted much attention as efficient single photon emitters and quantum bits. These quantum optical devices mostly require single or low-density NV centers doped in thin diamond membranes. In contrast, this study focuses on diamond photonic nanostructures with a high concentration of NV centers to achieve a diamond color center laser with a sufficient gain available as a visible light source and a sensitive magnetic-field sensor. We employ high-dose helium ion implantation to type-Ib diamond substrates and thermal annealing, which enables us to obtain uniform thin diamond membranes containing a dense ensemble of NV centers. Luminescence spectroscopy reveals the kinetics of NV centers at high temperature from which we find an optimum annealing temperature maximizing the NV center emission while suppressing the transformation from NV to H3 centers. Furthermore, fine photonic nanowires are also successfully fabricated in the air-suspended diamond membrane, and they exhibit intense photoluminescence from the NV centers with a concentration as high as 7 × 1016 cm−3 (0.4 ppm). These results suggest a route to the fabrication of diamond photonic nanostructures containing a dense ensemble of NV centers, which can be a key material for developing diamond-based light emitting and magnetic-field sensing devices.