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The Japan Society of Applied Physics

[JSAP Paper Award Speech] Perfect selective alignment of nitrogen-vacancy centers in diamond

Takahiro Fukui, Yuki Doi, Takehide Miyazaki, Yoshiyuki Miyamoto, Hiromitsu Kato, Tsubasa Matsumoto, Toshiharu Makino, Satoshi Yamasaki, Ryusuke Morimoto, Norio Tokuda, Mutsuko Hatano, Yuki Sakagawa, Hiroki Morishita, Toshiyuki Tashima, Shinji Miwa, Yoshishige Suzuki, Norikazu Mizuochi

Published Jul 22, 2016• 0 citations
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Nitrogen-vacancy (NV) centers in diamond have attracted significant interest because of their excellent spin and optical characteristics for quantum information and metrology. To exploit these characteristics, precise control of the orientation of the NV axis in the lattice is essential. Here we show that the orientation of more than 99% of the NV centers can be aligned along the [111] axis by chemical vapor deposition homoepitaxial growth on (111) substrates. We also discuss the alignment mechanisms. Our result enables a fourfold improvement in the magnetic field sensitivity and opens new avenues to the optimum design of NV center devices.

arXiv:1403.5057•Applied Physics Express•Apr 9, 2014•138 citations
Nitrogen-vacancy (NV) centers in diamond have attracted significant interest because of their excellent spin and optical characteristics for quantum information and metrology. To exploit these characteristics, precise control of the orientation of the NV axis in the lattice is essential. Here we show that the orientation of more than 99% of the NV centers can be aligned along the [111] axis by chemical vapor deposition homoepitaxial growth on (111) substrates. We also discuss the alignment mechanisms. Our result enables a fourfold improvement in the magnetic field sensitivity and opens new avenues to the optimum design of NV center devices.