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Bulletin of the American Physical Society

Perfect selective orientation of nitrogen vacancy centers in diamond

Takahiro Fukui, Yuki Doi, Takehide Miyazaki, Yoshiyuki Miyamoto, Hiromitsu Kato, Tsubasa Matsumoto, Toshiharu Makino, Satoshi Yamasaki, Ryusuke Morimoto, Norio Tokuda, Mutsuko Hatano, Yuki Sakagawa, Hiroki Morishita, Toshiyuki Tashima, Shinji Miwa, Yoshishige Suzuki, Norikazu Mizuochi

Published Mar 2, 2015• 0 citations
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Nitrogen-Vacancy (NV) centers in diamond are expected as highly sensitive magnetic sensors operable at room temperature. One major challenge in improving sensitivity is controlling the NV axis orientation. In diamond crystals, NV centers are typically randomly oriented along four crystallographic axes. Since only NV centers on a specific axis are utilized, NV centers on other axes act as fluorescence noise. Therefore, selectively forming NV centers along a single crystallographic axis is expected to enhance sensitivity. Perfectly oriented NV centers can be fabricated by nitrogen doping during chemical vapor deposition (CVD) growth, however, achieving a high NV center density remains challenging. In contrast, a high NV center density can be achieved by electron-beam irradiation followed by post-annealing, although orientation control remains difficult. In this study, we attempted to control NV center orientation by applying microwave annealing after electron-beam irradiation. Generally, microwave irradiation of material induces heating via Joule, dielectric and magnetic losses. Diamond has negligible dielectric and magnetic losses, so a boron doped diamond layer was formed as conductive layer and microwave annealing was performed via Joule loss. Because the conductive layer is thin, an electric field is applied throughout the whole diamond, resulting in a drift current flowing across the diamond. We thought that by controlling this current in the [111] direction, it would be possible to preferentially form [111]-oriented NV centers.

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Nitrogen-vacancy (NV) centers in diamond have attracted significant interest because of their excellent spin and optical characteristics for quantum information and metrology. To exploit these characteristics, precise control of the orientation of the NV axis in the lattice is essential. Here we show that the orientation of more than 99% of the NV centers can be aligned along the [111] axis by chemical vapor deposition homoepitaxial growth on (111) substrates. We also discuss the alignment mechanisms. Our result enables a fourfold improvement in the magnetic field sensitivity and opens new avenues to the optimum design of NV center devices.
The nitrogen vacancy (NV) center in diamond is promising as an electron spin qubit due to its long-lived coherence and optical addressability. The ground state is a spin triplet with two levels $({m}_{s}=\ifmmode\pm\else\textpm\fi{}1)$ degenerate at zero magnetic field. Polarization-selective microwave excitation is an attractive method to address the spin transitions independently since this allows operation down to zero magnetic field. Using a resonator designed to produce circularly polarized microwaves, we have investigated the polarization selection rules of the NV center. We first apply this technique to NV ensembles in [100]- and [111]-oriented samples. Next, we demonstrate an imaging technique, based on optical polarization dependence, which allows rapid identification of the orientations of many single NV centers. Finally, we test the microwave polarization selection rules of individual NV centers of known orientation.
Nitrogen-Vacancy (NV) centers in diamond are expected as highly sensitive magnetic sensors operable at room temperature. One major challenge in improving sensitivity is controlling the NV axis orientation. In diamond crystals, NV centers are typically randomly oriented along four crystallographic axes. Since only NV centers on a specific axis are utilized, NV centers on other axes act as fluorescence noise. Therefore, selectively forming NV centers along a single crystallographic axis is expected to enhance sensitivity. Perfectly oriented NV centers can be fabricated by nitrogen doping during chemical vapor deposition (CVD) growth, however, achieving a high NV center density remains challenging. In contrast, a high NV center density can be achieved by electron-beam irradiation followed by post-annealing, although orientation control remains difficult. In this study, we attempted to control NV center orientation by applying microwave annealing after electron-beam irradiation. Generally, microwave irradiation of material induces heating via Joule, dielectric and magnetic losses. Diamond has negligible dielectric and magnetic losses, so a boron doped diamond layer was formed as conductive layer and microwave annealing was performed via Joule loss. Because the conductive layer is thin, an electric field is applied throughout the whole diamond, resulting in a drift current flowing across the diamond. We thought that by controlling this current in the [111] direction, it would be possible to preferentially form [111]-oriented NV centers.