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Quantum Information and Measurement (QIM)

High-fidelity elementary qubit operations with trapped ions

D.M. Lucas, T. P. Harty, Christopher J. Ballance, Diana Prado Lopes Aude Craik, M. A. Sepiol, Vera M. Schäfer, K. Thirumalai, J. E. Tarlton, L. J. Stephenson, J. Wolf, Joseph F. Goodwin, A. C. Hughes, Clemens Löschnauer, T. G. Ballance, Andrew M. Steane

Published Jan 1, 2017• 1 citation
Publisher

Abstract

I will describe recent experimental work at Oxford on implementing elementary one- and two-qubit operations with the high fidelities (99.9% or more) required for the implementation of quantum error correction, using trapped-ion “atomic clock” qubits.
DOI
10.1364/qim.2017.qw6a.1

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Quantum computers offer great potential for significant speedup in executing certain algorithms compared to their classical counterparts. One of the most promising physical systems in which implementing such a device seems viable are trapped atomic ions. All of the fundamental operations needed for quantum information processing have already been experimentally demonstrated in trapped ion systems. Today, the remaining two obstacles are to improve the fidelities of these operations up to the point where quantum error correction techniques can be successfully applied, as well as to scale up the present systems to a higher number of quantum bits (qubits). This thesis addresses both issues. On the one hand, it decribes the experimental implementation of a high-fidelity two-qubit quantum logic gate, which is the most technically demanding fundamental operation to realise in practice. On the other hand, the presented work is carried out in a microfabricated surface ion trap – an architecture that holds the promise of scalability. The gate is applied directly to hyperfine "atomic clock" qubits in 43Ca+ ions using the near-field microwave magnetic field gradient produced by an integrated trap electrode. To protect the gate against fluctuating energy shifts of the qubit states, as well as to avoid the need to null the microwave field at the position of the ions, a dynamically decoupled Mølmer-Sørensen scheme is employed. After accounting for state preparation and measurement errors, the achieved gate fidelity is 99.7(1)%. In previous work, the same apparatus has been used to demonstrate coherence times of T*2 ≈ 50 s and all single-qubit operations with fidelity > 99.95%. To gain access to the "atomic clock" qubit transition in 43Ca+, a static magnetic field of 146G is applied. The resulting energy level Zeeman-structure is spread over many times the linewidth of the atomic transition used for Doppler cooling. This thesis presents a simple and robust method for Doppler cooling and obtaining high fluorescence from this qubit in spite of the complicated level structure. A temperature of 0.3mK, slightly below the Doppler limit, is reached.
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Trapped atomic ions are a promising candidate system for developing a quantum computer. All elementary operations for quantum information processing have al- ready been achieved in trapped-ion systems with errors below the “fault-tolerant threshold”, meaning that these errors are sufficiently small to be removed with quan- tum error correction. However, the preservation of quantum information over the short timescales that are relevant for quantum computing has not, to our knowledge, been measured before in trapped-ion qubits. Previous investigations have measured decoherence over long times and extrapolated an exponential decay model to short times. We directly measure the qubit memory error rate over short timescales, which is made possible by the high-fidelity single-qubit gates and state preparation and mea- surement in our system. Our qubit is a hyperfine “atomic clock” transition in 43Ca+, and gates are applied with near-field microwaves. We find that the assumption of exponential decay of qubit state coherence does not apply in our system. The data is fit well by a model of 1/f frequency noise with a low-frequency cutoff. The small- est memory error that we measure is 3(1)×10−6 over 2ms. The time at which our qubit memory error is 1×10−3, an important threshold for viable quantum error correction, is ≈400ms. We also present a design study into a new ion trap electrode geometry for applying near-field microwave two-qubit gates. This design features an ‘S’-shaped meander electrode to passively null the microwave field at the ions’ locations. It has improved isolation between the meander and other electrodes compared to previous work on this, which should reduce the sensitivity of the microwave field distribution to the boundary conditions of these electrodes. We show that the trap would allow for ion chains to be trapped, transported and split with feasible DC and RF voltages.