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Bulletin of the American Physical Society

High-Fidelity Entangling Gates for Two-Electron Spin Qubits

Pascal Cerfontaine, Sebastian Mehl, David Peter Divincenzo, Hendrik Bluhm

Published Mar 16, 2016• 0 citations
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Motivated by the recent experimental progress in exploring the use of a nitrogen-vacancy (NV) center in diamond as a quantum computing platform, we propose schemes for fast and high-fidelity entangling gates on this platform. Using both analytical and numerical calculations, we demonstrate that synchronization effects between resonant and off-resonant transitions may be exploited such that spin-flip errors due to strong driving may be eliminated by adjusting the gate time or the driving field. This allows for fast, high-fidelity entangling operations between the electron spin and one or several nuclear spins. We investigate a two-qubit system where the NV center comprises a N 15 atom and a qubit-qutrit system for the case of a N 14 atom. In both cases, we predict a complete suppression of off-resonant driving errors for two-qubit gates when addressing the NV electron spin conditioned on states of nuclear spins of the nitrogen atom of the defect. Additionally, we predict fidelities > 0.99 for multiqubit gates when including the surrounding C 13 atoms in the diamond lattice in the conditioned logic.
Abstract Electron spins in semiconductors are promising qubits because their long coherence times enable nearly 10 9 coherent quantum gate operations. However, developing a scalable high-fidelity two-qubit gate remains challenging. Here, we demonstrate an entangling gate between two double-quantum-dot spin qubits in GaAs by using a magnetic field gradient between the two dots in each qubit to suppress decoherence due to charge noise. When the magnetic gradient dominates the voltage-controlled exchange interaction between electrons, qubit coherence times increase by an order of magnitude. Using randomized benchmarking, we measure single-qubit gate fidelities of ~ 99%, and through self-consistent quantum measurement, state, and process tomography, we measure an entangling gate fidelity of 90%. In the future, operating double quantum dot spin qubits with large gradients in nuclear-spin-free materials, such as Si, should enable a two-qubit gate fidelity surpassing the threshold for fault-tolerant quantum information processing.
Implementing high-fidelity two-qubit gates in single-electron spin qubits in silicon double quantum dots is still a major challenge. In this work we employ analytical methods to design control pulses that generate high-fidelity entangling gates for quantum computers based on this platform. Using realistic parameters and initially assuming a noise-free environment, we present simple control pulses that generate cnot, cphase, and cz gates with average fidelities greater than 99.99% and gate times as short as 45 ns. Moreover, using the local invariants of the system's evolution operator, we show that a simple square pulse generates a cnot gate in less than 27 ns and with a fidelity greater than 99.99%. Last, we use the same analytical methods to generate two-qubit gates locally equivalent to CNOT\sqrt{\mathrm{CNOT}}CNOT​ and CZ\sqrt{\mathrm{CZ}}CZ​ that are used to implement simple two-piece pulse sequences that produce high-fidelity cnot and cz gates in the presence of low-frequency noise.