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Quantum Information and Measurement (QIM)

Ion microtrap technology for quantum information and precision spectroscopy

J.-P. Likforman, Vincent Tugayé, S. Guibal, Luca Guidoni

Published Jan 1, 2017• 0 citations
Publisher

Abstract

We design and operate micro-fabricated ion surface traps made of gold electrodes deposited on silica substrates. We clean the electrodes by ion bombardment, load the traps with single ions, and characterize the heating-rate by Doppler-re-cooling.
DOI
10.1364/qim.2017.qw6a.3

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Laser cleaning of the electrodes in a planar micro-fabricated ion trap has been attempted using ns pulses from a tripled Nd:YAG laser at 355 nm.The effect of the laser pulses at several energy density levels has been tested by measuring the heating rate of a single 40 Ca + trapped ion as a function of its secular frequency ω z .A reduction of the electric-field noise spectral density by ∼50% has been observed and a change in the frequency dependence also noticed.This is the first reported experiment where the 'anomalous heating' phenomenon has been reduced by removing the source as opposed to reducing its thermal driving by cryogenic cooling.This technique may open up the way to better control of the electrode surface quality in ion microtraps.The recent success of quantum information experiments based on trapped ions [1] triggered research on micro-fabricated radio-frequency (Paul) traps, which are in principle able to fulfill the scalability requirement of a quantum computer [2,3].In such traps, a set of micro-fabricated conducting electrodes generates oscillating and static electric fields that trap laser-cooled ions in a harmonic potential well at a sub-millimeter distance d from the substrate [4,5].However, the presence of uncontrolled fluctuating electric fields affects the ions' external motion and induces an 'anomalous heating' that limits the achievable fidelity of multi-ion quantum gates that rely on the coherent control of this motion [6].Experimental observations concerning this phenomenon 4
Through-substrate interconnects are a key technology for scaling surface-electrode ion traps (SEITs) toward large electrode counts and complex architectures. Dielectric substrates such as fused silica offer superior RF performance compared to silicon, but the reliable fabrication of void-free through-glass vias (TGVs) remains challenging. In this work, we demonstrate a SEIT fabricated on a fused silica substrate incorporating TGVs. The via-holes are formed using Selective Laser-Induced Etching and subsequently metallized with gold by electroplating. A patent-pending geometry-assisted bottom-up plating approach enables void-free filling using constant-current electroplating without electrolyte additives or pulsed deposition schemes. Electrical characterization across multiple wafers confirms a TGV-level yield above 98.8 %, demonstrating the robustness and reproducibility of the developed TGV technology. The TGVs are combined with multilayer SEIT fabrication, enabling vertical signal routing to all electrodes while maintaining an unaffected trapping surface without wire bonds. To interface the trap with external control electronics, a glass interposer providing signal fan-out to a larger pitch is designed and fabricated. The trap chip and the interposer are integrated using thermocompression bonding, forming a compact chip-to-chip assembly. The presented technology demonstrates the first fully integrated multilayer SEIT on fused silica incorporating void-free TGVs.
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