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Single-Photon Avalanche Diodes for quantum key distribution

S. Cova, Alberto Tosi, Franco Zappa, Alberto D. Dalla Mora

Published Jan 1, 2007• 1 citation
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Silicon Single Photon Avalanche Diodes for Quantum Key Distribution

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Development of an afterpulse effect model of InGaAs/InP single-photon avalanche diodes for application in quantum key distribution systems

Alexandr A. Filyaev, Anton Losev, Vladimir Zavodilenko +1 more

Subject of study. A noise parameter, such as an afterpulse effect, that occurs in indium-gallium arsenide/indium phosphide single-photon avalanche diodes when operated as part of a single-photon detector in quantum key distribution systems was investigated. The aim of this study was the analysis of indium-gallium arsenide/indium phosphide single-photon avalanche diode afterpulse effect estimation approaches for real-world quantum key distribution systems and the development of a measurement technique and model for estimating the afterpulse effect in indium-gallium arsenide/indium phosphide single-photon avalanche diodes. Method. For the experimental measurement of the afterpulse probability in indium-gallium arsenide/indium phosphide single-photon avalanche diodes, a special stand was used. All components of this stand are controlled by LabVIEW software. The developed model of afterpulse probability is based on the non-Markovian character of this effect. Main results. A measurement technique and probabilistic model were developed to estimate the afterpulse based on the recursive nature of this effect in indium-gallium arsenide/indium phosphide single-photon avalanche diodes. This makes it possible to estimate the true value of the afterpulse probability by reaction with a single triggering of a single-photon detector composed of indium-gallium arsenide/indium phosphide single-photon avalanche diodes. Analysis of approaches to estimating the afterpulse used in real-world quantum key distribution systems was performed. The advantages of the developed approach over the standard methods that do not take into account the non-Markov nature of the effect under consideration are demonstrated. Practical significance. The proposed approach was developed in the form of two models (simple and complex), which allows a compromise between the accuracy of calculations and their complexity for the application of such devices in quantum key distribution systems.

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The application of quantum key distribution (QKD) has raised particular demands for single-photon detectors. One of the most promising candidates at the low-loss optical fibre communications windows is the planar geometry InGaAs/InP single-photon avalanche diode. These detectors have been modelled, fabricated and characterised at 1.55 µm wavelength. Their performance in terms of single-photon detection efficiency, dark count rate, timing jitter and afterpulsing behaviour are reported and compared with the best commercially available, linear multiplication avalanche photodiodes operated in Geiger-mode. Their use in the application of QKD is discussed.

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Quantum 2.0 Conference and Exhibition•Jan 1, 2023•0 citations
Subject of study. A noise parameter, such as an afterpulse effect, that occurs in indium-gallium arsenide/indium phosphide single-photon avalanche diodes when operated as part of a single-photon detector in quantum key distribution systems was investigated. The aim of this study was the analysis of indium-gallium arsenide/indium phosphide single-photon avalanche diode afterpulse effect estimation approaches for real-world quantum key distribution systems and the development of a measurement technique and model for estimating the afterpulse effect in indium-gallium arsenide/indium phosphide single-photon avalanche diodes. Method. For the experimental measurement of the afterpulse probability in indium-gallium arsenide/indium phosphide single-photon avalanche diodes, a special stand was used. All components of this stand are controlled by LabVIEW software. The developed model of afterpulse probability is based on the non-Markovian character of this effect. Main results. A measurement technique and probabilistic model were developed to estimate the afterpulse based on the recursive nature of this effect in indium-gallium arsenide/indium phosphide single-photon avalanche diodes. This makes it possible to estimate the true value of the afterpulse probability by reaction with a single triggering of a single-photon detector composed of indium-gallium arsenide/indium phosphide single-photon avalanche diodes. Analysis of approaches to estimating the afterpulse used in real-world quantum key distribution systems was performed. The advantages of the developed approach over the standard methods that do not take into account the non-Markov nature of the effect under consideration are demonstrated. Practical significance. The proposed approach was developed in the form of two models (simple and complex), which allows a compromise between the accuracy of calculations and their complexity for the application of such devices in quantum key distribution systems.
The application of quantum key distribution (QKD) has raised particular demands for single-photon detectors. One of the most promising candidates at the low-loss optical fibre communications windows is the planar geometry InGaAs/InP single-photon avalanche diode. These detectors have been modelled, fabricated and characterised at 1.55 µm wavelength. Their performance in terms of single-photon detection efficiency, dark count rate, timing jitter and afterpulsing behaviour are reported and compared with the best commercially available, linear multiplication avalanche photodiodes operated in Geiger-mode. Their use in the application of QKD is discussed.