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Japan Geoscience Union

Development of 1.9-THz-band Waveguide-type Hot-electron Bolometer Mixer Employing Superconducting NbTiN Microbridge

Kosuke Saito, M. Inoue, Yutaka Hasegawa, Kimihiro Kimura, Tatsuya Soma, Osamu Oguchi, S. Yamamoto, Hiroyuki Maezawa

Published May 1, 2015• 0 citations
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Japanese Journal of Applied Physics•Feb 20, 2015•1 citation
We present a characterization of a 1.5 THz waveguide niobium titanium nitride (NbTiN) superconducting hot electron bolometer (HEB) mixer which can be pumped by a commercial solid state tunable local oscillator (LO) source. The NbTiN HEB mixer is made from a 12 nm thick NbTiN thin film deposited on a quartz substrate at room temperature. A gold electrode is formed in situ on the NbTiN thin film without breaking vacuum to ensure good contact. The uncorrected DSB receiver noise temperature is measured to be 1700 K at 1.5 THz, whereas the mixer noise temperature is derived to be 1000 K after corrections for losses of the input optics and the intermediate frequency (IF) amplifier chain. The required LO power absorbed in the HEB mixer is evaluated to be 340 nW by using an isothermal technique. The IF gain bandwidth is supposed to be about 1.3 GHz or higher. The present results show that good performance can be obtained at 1.5 THz even with a relatively thick NbTiN film (12 nm), as in the case of 0.8 THz. In order to investigate the cooling mechanism of our HEB mixers, we have conducted performance measurements for a few HEB mixers with different microbridge sizes both at 1.5 and 0.8 THz. The noise performance of the NbTiN HEB mixers is found to depend on the length of the NbTiN microbridge. The shorter the microbridge is, the lower the receiver noise temperature is. This may imply a contribution of the diffusion cooling in addition to the phonon cooling.
Abstract We have developed waveguide-type low-noise superconducting hot-electron bolometer (HEB) mixers for astronomical observations in the 1.3–1.5 THz region by using a relatively thick NbTiN superconducting film (10.8 nm). We have achieved a receiver noise temperature of 490 K (DSB: double side band) at 1.475 THz. This noise temperature corresponds to seven times the quantum noise. According to gain bandwidth measurements, the contribution of diffusion cooling is found to be responsible for such a good noise performance.