Development of THz band quasi-optical hot-electron bolometer mixer employing superconducting NbTiN microbridge

T. Yamakura

Kosuke Saito, M. Inoue, Yutaka Hasegawa +5 more

Serguei Cherednichenko, P. Khosropanah, E. Kollberg +2 more

Hiroyuki Maezawa, T. Yamakura, T. Shiino +10 more

We are developing quasi-optical superconducting hot-electron bolometer (HEB) mixer receivers for astronomical and atmospheric remote sensing applications. The microbridge of the HEB mixer was fabricated at room temperature from a 6.8-nm-thick niobium titanium nitride (NbTiN) film deposited on a 20-nm-thick aluminum nitride (AlN) buffer layer, using a helicon sputtering technique at a slow deposition rate. The mixer was cooled to 4.2 K using a closed-cycled mechanical 4 K pulse-tube cryocooler with a temperature fluctuation of$\pm$1.6 mK. The stability of a large-volume NbTiN HEB mixer was studied at 1.47 THz by changing local oscillator (LO) power with the mixer bias voltage fixed. The intermediate frequency (IF) signal measured at 1.5 GHz had a maximum peak at a certain mixer bias current. The receiver noise temperature was lowest at around the IF maximum peak. It was also found that the IF signal was most stable at around the IF maximum peak under conditions in which the instability of LO pumping level, induced by small mechanical vibrations of the cryostat, remained in the optical system.

Ling Jiang, Shoichi Shiba, Tatsuya Shiino +7 more

We present a characterization of a 1.5 THz waveguide niobium titanium nitride (NbTiN) superconducting hot electron bolometer (HEB) mixer which can be pumped by a commercial solid state tunable local oscillator (LO) source. The NbTiN HEB mixer is made from a 12 nm thick NbTiN thin film deposited on a quartz substrate at room temperature. A gold electrode is formed in situ on the NbTiN thin film without breaking vacuum to ensure good contact. The uncorrected DSB receiver noise temperature is measured to be 1700 K at 1.5 THz, whereas the mixer noise temperature is derived to be 1000 K after corrections for losses of the input optics and the intermediate frequency (IF) amplifier chain. The required LO power absorbed in the HEB mixer is evaluated to be 340 nW by using an isothermal technique. The IF gain bandwidth is supposed to be about 1.3 GHz or higher. The present results show that good performance can be obtained at 1.5 THz even with a relatively thick NbTiN film (12 nm), as in the case of 0.8 THz. In order to investigate the cooling mechanism of our HEB mixers, we have conducted performance measurements for a few HEB mixers with different microbridge sizes both at 1.5 and 0.8 THz. The noise performance of the NbTiN HEB mixers is found to depend on the length of the NbTiN microbridge. The shorter the microbridge is, the lower the receiver noise temperature is. This may imply a contribution of the diffusion cooling in addition to the phonon cooling.

Alain Kreisler, Christophe Péroz, Bruno Guillet +3 more