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Design of a Josephson memory cell using an rf-SQUID

Masahiro Yamashita, Hiroaki Myoren, S. Takada

Published Sep 13, 2000• 0 citations
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Power Reduction of Josephson Random Access Memory Using Stochastic Resonance

Ryosuke Kihara, Yuki Yamanashi, Nobuyuki Yoshikawa

A superconducting quantum interference device (SQUID) is used as a memory cell in a superconducting Josephson random access memory (RAM) system. In the Josephson RAM, power is mainly consumed by driver circuits, which drive word and bit lines to select the target memory cell. We investigated the power reduction of READ/WRITE operation of the SQUID memory cell by using a stochastic resonance phenomenon. By using a noise-assisted state transition of the SQUID, the driving current required for the READ/WRITE operation of the memory cell can be reduced. We investigated optimum bias and noise conditions where stochastic resonance efficiently occurs on the basis of analog circuit simulation that takes influences of thermal noises into account. According to the simulation results, the power dissipation required for READ/WRITE operation can be reduced by approximately 20% under the optimum bias and noise conditions when the error rate of READ/WRITE operation is 10-10. We designed a 1-bit rf-SQUID memory cell using the AIST 2.5 kA/cm2Nb standard process 2, and tested the cell by applying a white noise from the room-temperature instrument. The probability that a datum is written to the memory cell and read out correctly was measured under various bias and noise conditions. We have experimentally observed stochastic resonance and obtained the error rate of 10-5 when the power dissipation of READ/WRITE operation is reduced to 80% compared to the conventional Josephson RAM.

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Transparency-engineered SQUID cells for Kerr-free three-wave-mixing Josephson metamaterials

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We introduce a transparency-engineered rf-SQUID cell for Kerr-free three-wave-mixing Josephson metamaterials. This design replaces the conventional tunnel-junction element with an effective Josephson element formed by two junctions in series, yielding a non-sinusoidal energy-phase relation that can be used as a tunable nonlinear design resource. We show that the asymmetry between the two series junctions and the applied flux bias provide independent control over the local expansion of the rf-SQUID potential, enabling operating points where the leading quartic Kerr term is suppressed while the cubic nonlinearity remains finite. We derive the corresponding Kerr-free condition, identify the resulting operating ridge in parameter space, and analyze the local stability and passive-matching constraints that bound its physically accessible portion. Our results provide a compact unit-cell design principle for three-wave-mixing Josephson metamaterials and suggest a route toward Kerr-suppressed Josephson traveling-wave parametric amplifiers.

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A capacitively coupled SFQ Josephson memory cell

Hideo Suzuki, S. Hasuo

The design and experimental results for a novel type of Josephson memory cell are presented. The cell has a simpler construction than the conventional Henkels-type, using a one-junction SQUID (superconducting quantum interference device) capacitively coupled to a single junction. Binary data are stored as single flux quanta and are destructively read out by sensing a pulse caused by a vortex-mode transition. Computer simulations suggest that the read operation could be performed with a bias margin for the sense junction of +or-28% and that the rise time of the sense current in a 16-bit memory cell would be as fast as 30 ps, despite having to sense a vortex-mode transition. Results are presented for a memory cell fabricated with Nb-AlO/sub x/-Nb junctions.>

IEEE Transactions on Electron Devices•Jul 1, 1988•10 citations
A superconducting quantum interference device (SQUID) is used as a memory cell in a superconducting Josephson random access memory (RAM) system. In the Josephson RAM, power is mainly consumed by driver circuits, which drive word and bit lines to select the target memory cell. We investigated the power reduction of READ/WRITE operation of the SQUID memory cell by using a stochastic resonance phenomenon. By using a noise-assisted state transition of the SQUID, the driving current required for the READ/WRITE operation of the memory cell can be reduced. We investigated optimum bias and noise conditions where stochastic resonance efficiently occurs on the basis of analog circuit simulation that takes influences of thermal noises into account. According to the simulation results, the power dissipation required for READ/WRITE operation can be reduced by approximately 20% under the optimum bias and noise conditions when the error rate of READ/WRITE operation is 10-10. We designed a 1-bit rf-SQUID memory cell using the AIST 2.5 kA/cm2Nb standard process 2, and tested the cell by applying a white noise from the room-temperature instrument. The probability that a datum is written to the memory cell and read out correctly was measured under various bias and noise conditions. We have experimentally observed stochastic resonance and obtained the error rate of 10-5 when the power dissipation of READ/WRITE operation is reduced to 80% compared to the conventional Josephson RAM.
We introduce a transparency-engineered rf-SQUID cell for Kerr-free three-wave-mixing Josephson metamaterials. This design replaces the conventional tunnel-junction element with an effective Josephson element formed by two junctions in series, yielding a non-sinusoidal energy-phase relation that can be used as a tunable nonlinear design resource. We show that the asymmetry between the two series junctions and the applied flux bias provide independent control over the local expansion of the rf-SQUID potential, enabling operating points where the leading quartic Kerr term is suppressed while the cubic nonlinearity remains finite. We derive the corresponding Kerr-free condition, identify the resulting operating ridge in parameter space, and analyze the local stability and passive-matching constraints that bound its physically accessible portion. Our results provide a compact unit-cell design principle for three-wave-mixing Josephson metamaterials and suggest a route toward Kerr-suppressed Josephson traveling-wave parametric amplifiers.
The design and experimental results for a novel type of Josephson memory cell are presented. The cell has a simpler construction than the conventional Henkels-type, using a one-junction SQUID (superconducting quantum interference device) capacitively coupled to a single junction. Binary data are stored as single flux quanta and are destructively read out by sensing a pulse caused by a vortex-mode transition. Computer simulations suggest that the read operation could be performed with a bias margin for the sense junction of +or-28% and that the rise time of the sense current in a 16-bit memory cell would be as fast as 30 ps, despite having to sense a vortex-mode transition. Results are presented for a memory cell fabricated with Nb-AlO/sub x/-Nb junctions.>