Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

IEICE Technical Report; IEICE Tech. Rep.

Ultrafast all-optical memory operation using a polarization bistable VCSEL

Takeo Katayama, Sakaguchi Jun, Hitoshi Kawaguchi

Published Aug 19, 2010• 0 citations
OpenAlex

Related papers

Ultrafast optical memory and all-optical signal processing using polarization bistable VCSELs

仁司 河口

Ultrafast optical memory and all-optical signal processing using polarization bistable VCSELs

The Review of Laser Engineering•Jan 1, 2006•0 citations

Ultrafast all-optical switching by single photons

Thomas Volz, Andreas Reinhard, Martin Winger +4 more

arXiv:1111.2915•Nature Photonics•Aug 10, 2012•441 citations

Ultrafast all-optical memory operation using a polarization bistable VCSEL

Hitoshi Kawaguchi

The fastest operation of all-optical flip-flop memory was experimentally demonstrated using a 980-nm polarization bistable vertical-cavity surface-emitting laser (VCSEL). Operating conditions of the input signal power and the frequency detuning to achieve the fast optical memory operation were characterized experimentally. At the optimum condition, 1-bit data signals were arbitrarily sampled and memorized from a 26-1 pseudorandom bit sequence return-to-zero signal at 20 Gb/s by using AND gate and memory functionalities obtained from the polarization bistability. In addition, 1-bit memory operation was achieved for a 6-bit non-return-to-zero signal at 40 Gb/s. Both memory operations had optical gain.

International Conference on Transparent Optical Networks•Jun 1, 2010•1 citation

Numerical studies of the switching of a bistable optical memory

F. A. Hopf, Pierre Meystre

Optics Communications•May 1, 1979•33 citations

All-optical memory operation of 980-nm polarization bistable VCSEL for 20-Gb/s PRBS RZ and 40-Gb/s NRZ data signals

Jun Sakaguchi, Takeo Katayama, Hitoshi Kawaguchi

The fastest known operation of all-optical flip-flop memory was experimentally demonstrated using a 980-nm polarization bistable vertical-cavity surface-emitting laser (VCSEL). Operating conditions of the input signal power and the frequency detuning to achieve the fast optical memory operation were characterized experimentally. At the optimum condition, 1-bit data signals were arbitrarily sampled and memorized from a 2(6)-1 pseudorandom bit sequence return-to-zero signal at 20 Gb/s by using AND gate and memory functionalities obtained from the polarization bistability. In addition, 1-bit memory operation was achieved for a 6-bit non-return-to-zero signal at 40 Gb/s. Both memory operations required 250-microW data signal power and had optical gain. The high potential of all-optical flip-flop memories based on polarization bistable VCSELs for use in ultrafast all-optical future networks was demonstrated.

Optics Express•May 26, 2010•52 citations

10 Gb/s optical buffer memory using a polarization bistable VCSEL

Takashi Mori, Yousuke Sato, Hitoshi Kawaguchi

Optical buffer memory for 10-Gb/s data signal is demonstrated experimentally using a polarization bistable vertical-cavity surface-emitting laser (VCSEL). The optical buffer memory is based on an optical AND gate function and the polarization bistability of the VCSEL. Fast AND gate operation responsive to 50-ps-width optical pulses is achieved experimentally by increasing the detuning frequency between an injection light into the VCSEL and a lasing light from the VCSEL. A specified bit is extracted from the 10-Gb/s data signal by the fast AND gate operation and is stored as the polarization state of the VCSEL by the polarization bistability. The corresponding numerical simulations are also performed using two-mode rate equations taking into account the detuning frequency. The simulation results confirm the fast AND gate operation by increasing the detuning frequency as well as the experimental results.

European Conference on Optical Communication•Jan 1, 2007•4 citations
The fastest operation of all-optical flip-flop memory was experimentally demonstrated using a 980-nm polarization bistable vertical-cavity surface-emitting laser (VCSEL). Operating conditions of the input signal power and the frequency detuning to achieve the fast optical memory operation were characterized experimentally. At the optimum condition, 1-bit data signals were arbitrarily sampled and memorized from a 26-1 pseudorandom bit sequence return-to-zero signal at 20 Gb/s by using AND gate and memory functionalities obtained from the polarization bistability. In addition, 1-bit memory operation was achieved for a 6-bit non-return-to-zero signal at 40 Gb/s. Both memory operations had optical gain.
The fastest known operation of all-optical flip-flop memory was experimentally demonstrated using a 980-nm polarization bistable vertical-cavity surface-emitting laser (VCSEL). Operating conditions of the input signal power and the frequency detuning to achieve the fast optical memory operation were characterized experimentally. At the optimum condition, 1-bit data signals were arbitrarily sampled and memorized from a 2(6)-1 pseudorandom bit sequence return-to-zero signal at 20 Gb/s by using AND gate and memory functionalities obtained from the polarization bistability. In addition, 1-bit memory operation was achieved for a 6-bit non-return-to-zero signal at 40 Gb/s. Both memory operations required 250-microW data signal power and had optical gain. The high potential of all-optical flip-flop memories based on polarization bistable VCSELs for use in ultrafast all-optical future networks was demonstrated.
Optical buffer memory for 10-Gb/s data signal is demonstrated experimentally using a polarization bistable vertical-cavity surface-emitting laser (VCSEL). The optical buffer memory is based on an optical AND gate function and the polarization bistability of the VCSEL. Fast AND gate operation responsive to 50-ps-width optical pulses is achieved experimentally by increasing the detuning frequency between an injection light into the VCSEL and a lasing light from the VCSEL. A specified bit is extracted from the 10-Gb/s data signal by the fast AND gate operation and is stored as the polarization state of the VCSEL by the polarization bistability. The corresponding numerical simulations are also performed using two-mode rate equations taking into account the detuning frequency. The simulation results confirm the fast AND gate operation by increasing the detuning frequency as well as the experimental results.