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Physics World

Atom lithography unveils its new mask

Edwin Cartlidge

Published Nov 1, 2002• 0 citations
Publisher

Abstract

Researchers in the US have developed a new technique that could ensure the continued miniaturization of integrated circuits. Developed by Joseph Thywissen and Mara Prentiss at Harvard University in the US, the technique uses atoms rather than light to carve the features in chips. Their work shows that the resolution of atom lithography, which could replace optical lithography in chip-fabrication plants, need not be limited by the wavelength of light.

DOI
10.1088/2058-7058/15/11/12

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Researchers in the US have developed a new technique that could ensure the continued miniaturization of integrated circuits. Developed by Joseph Thywissen and Mara Prentiss at Harvard University in the US, the technique uses atoms rather than light to carve the features in chips. Their work shows that the resolution of atom lithography, which could replace optical lithography in chip-fabrication plants, need not be limited by the wavelength of light.
Atom lithography is a technique in which a light field is used to pattern an atomic beam. This patterned flux is then deposited onto a substrate, resulting in a nanostructured thin film. The smallest structures that have been made thus far using this technique are around 30 nm wide. This thesis investigates the technique, expanding its possibilities. The work-horse for the development of atom lithography has been Cr, as this transition metal atom has a closed transition in a wavelength range that is accessible to dye lasers. We extend the technique to Fe, the first ferromagnetic element to be used for atom lithography. The setup that was used to do this experiment is described, along with its critical design parameters. We present nanostructures that are typically 50 nm wide, and up to 4 nm high. The spacing between the nanolines is 186.05 nm. The nanostructure profile is compared to that of a simulated deposition process, and found to match. To the authors’ knowledge, this is the first demonstration of direct write atom lithography without laser cooling. A preliminary incursion into the magnetic properties of the nanostructures deposited is presented. In addition to giving an overview of the general ferromagnetic properties that might be expected, a deeper investigation of the magnetic anisotropy of the nanostructures deposited in this experiment is given. Novel resonant light masks are used in an experiment performed at the University of Konstanz (Germany). These light masks, using exactly instead of nearly resonant light, reveal some intriguing quantum mechanical effects. The most important of these features is the possibility to place structures closer together – at quarter wavelength spacings rather than half-wavelength intervals. Finally, the influence of surface diffusion on the structures obtained in an atom lithography experiment is investigated using kinetic Monte Carlo simulations. Several diffusion limiting effects are investigated; the influence of small amounts of residual reactive background gas is found to describe the experimental observations.
The resolutions of the optical lithography is limited by the well-known Rayleigh limit. Although the atom lithography can generate features smaller than this limit, the spacing of the pattern is still limited by the optical wavelength. Here, we proposed two atom lithography methods, both of which used the coherent Rabi oscillation to break the diffraction limit. One is in the microwave regime where the Rydberg atom is used and micrometer resolution can be achieved. The other is in the optical regime where sub-10 nanometer resolution is possible.
Mask based pattern generation with photolithography is a crucial step in microchip production. The next generation Extreme Ultra Violet (EUV) lithography instruments with a wavelength of 13.5 nm is currently under development. In principle this allows patterning down to a few nm resolution in a single exposure. However, there are many technical challenges due to the very high energy of the photons among others. Lithography with metastable atoms has been suggested as a cost effective, less complex alternative to EUV lithography. The big advantage of atom lithography is that the kinetic energy of an atom is much smaller than that of a photon for a given wavelength. However up till now no method has been available for making masks for atom lithography that can produce arbitrary, high resolution patterns. Here we present a solution to this problem. We show that it is possible to make masks based on binary holography that can generate arbitrary patterns down to a few nm resolution using a state of the art metastable helium source. We compare the flux of this source with that of an established EUV source (ASML, NXE:3100) and show that patterns can potentially be produced at comparable speeds. Finally we present an extension of the grid based holography method for a grid of hexagonally shaped subcells. Our method can be used with any wave beam, including other matter wave beams such as helium ions or electrons.
Mask-based pattern generation is a crucial step in microchip production. The next-generation extreme-ultraviolet- (EUV) lithography instruments with a wavelength of 13.5 nm are currently under development. In principle, this should allow patterning down to a resolution of a few nanometers in a single exposure. However, there are many technical challenges, including those due to the very high energy of the photons. Lithography with metastable atoms has been suggested as a cost-effective, less-complex alternative to EUV lithography. The great advantage of atom lithography is that the kinetic energy of an atom is much less than that of a photon for a given wavelength. However, until now no method has been available for making masks for atom lithography that can produce arbitrary, high-resolution patterns. Here we present a solution to this problem. First, traditional binary holography is extended to near-field binary holography, based on Fresnel diffraction. By this technique, we demonstrate that it is possible to make masks that can generate arbitrary patterns in a plane in the near field (from the mask) with a resolution down to the nanometer range using a state-of-the-art metastable-helium source. We compare the flux of this source with that of an established EUV source (NXE:3100, ASML) and show that patterns can potentially be produced at comparable speeds. Finally, we present an extension of the grid-based holography method for a grid of hexagonally shaped subcells. Our method can be used with any beam that can be modeled as a scalar wave, including other matter-wave beams such as helium ions, electrons, or acoustic waves.