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Physical Review B

Complexes of silicon, vacancy, and hydrogen in diamond: A density functional study

Gergő Thiering, Ádám Gali

Published Oct 20, 2015• 37 citations
Publisher

Abstract

The chemical vapor deposition of diamond is known to introduce complexes of silicon, vacancy, and hydrogen. Here the authors theoretically examine several such complexes, some of which have already been observed, others which could potentially form. Using hybrid density functional theory for the treatment of highly correlated orbitals, many measurable quantities are calculated. The SiV${}_{2}$H(-) negatively charged defect is found to be a promising candidate for a long lived solid state quantum memory.

DOI
10.1103/physrevb.92.165203

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The chemical vapor deposition of diamond is known to introduce complexes of silicon, vacancy, and hydrogen. Here the authors theoretically examine several such complexes, some of which have already been observed, others which could potentially form. Using hybrid density functional theory for the treatment of highly correlated orbitals, many measurable quantities are calculated. The SiV2{}_{2}2​H(-) negatively charged defect is found to be a promising candidate for a long lived solid state quantum memory.
Point defects in diamond may act as quantum bits. Recently, oxygen-vacancy related defects have been proposed to the origin of the so-called ST1 color center in diamond that can realize a long-living solid-state quantum memory. Motivated by this proposal we systematically investigate oxygen-vacancy complexes in diamond by means of first principles density functional theory calculations. We find that all the considered oxygen-vacancy defects have a high-spin ground state in their neutral charge state, which disregards them as an origin for the ST1 color center. We identify a high-spin metastable oxygen-vacancy complex and characterize their magneto-optical properties for identification in future experiments.
The silicon-vacancy (SiV) and nitrogen-vacancy (NV) centers in diamond are commonly regarded as prototypical defects for solid-state quantum information processing. Here, we show that when silicon and nitrogen are simultaneously introduced into the diamond lattice, these defects can strongly interact and form larger complexes. Nitrogen atoms strongly bind to Si and SiV centers, and complex formation can occur. Using a combination of hybrid density functional theory and group theory, we analyze the electronic structure and provide various useful physical properties, such as hyperfine structure, quasilocal vibrational modes, and a zero-phonon line, to enable experimental identification of these complexes. We demonstrate that the presence of substitutional silicon adjacent to nitrogen significantly shifts the donor level toward the conduction band, resulting in an activation energy for the SiN center that is comparable to phosphorus. We also find that the neutral SiNV center is of particular interest due to its photon emission at $\ensuremath{\sim}1530\phantom{\rule{0.28em}{0ex}}\mathrm{nm}$, which falls within the CCC band of telecom wavelengths and its paramagnetic nature. In addition, the optical transition associated with the SiNV0{\mathrm{SiNV}}^{0}SiNV0 color center exhibits very small electron-phonon coupling (Huang-Rhys factor = 0.78) resulting in high quantum efficiency (Debye-Waller factor = 46%) for single-photon emission. These features render this new center very attractive for a potential application in scalable quantum telecommunication networks.
Color centers in diamond are point defects within the diamond host lattice that absorb and emit light at optical frequencies. Besides contributing to the striking visual characteristics of "fancy colored" diamonds as gemstones, the centers--particularly the negatively charged nitrogen-vacancy (NV) center and silicon-vacancy (SiV-) center--offer a number of possibilities for quantum computation and quantum information processing. In this talk, I will summarize recent progress made in characterizing negatively charged silicon-vacancy centers in diamond using the technique of optical multidimensional coherent spectroscopy (MDCS). By comparing photoluminescence-based and heterodyne-detection based signal collection schemes in a high-density SiV- center sample, we have selectively identified a population of long-lived and nonradiative silicon-vacancy centers in diamond with more than 40 times as much inhomogeneous spectral broadening as the radiative silicon-vacancy center states that are more commonly observed using photoluminescence. Estimates of the degree of inhomogeneity and overall sample characteristics indicate that strain is likely to play a large role in the formation of these nonradiative states. The findings open possibilities for being able to actively tune the degree of radiative coupling in silicon-vacancy center systems, opening possibilities for new types of quantum-optical devices.
In search of the right diamond defect Certain defects in diamond are among the most promising physical implementations of qubits, the building blocks of quantum computers. However, identifying a defect with balanced properties is tricky: Nitrogen vacancy centers have a long lifetime but comparatively poor optical properties, whereas negatively charged silicon vacancy centers have the opposite characteristics. Rose et al. used careful materials engineering to stabilize the neutral charge state of silicon vacancy centers and found that they combine long coherence times with excellent optical properties. Science , this issue p. 60
A quantum-chemical study of the positive charge-state of the nitrogen-vacancy center in diamond is presented. Charge control of this promising qubit candidate is a focus of diamond quantum technology research, as currently charge stability relating to surfaces and nearby defects causes some difficulties for quantum applications. To demonstrate full charge control over the nitrogen vacancy, all three charge states should be identified and the processes that lead to charge state changes understood. However, experimental markers for the positive state remain elusive compared to the readily detectable zero-phonon lines of the neutral and negative. In this work we present predicted hyperfine and zero-field splitting tensors as clear signatures of the normally spinless NV+(1A1{\mathrm{NV}}^{+}\phantom{\rule{4pt}{0ex}}(^{1}\mathrm{A}_{1}NV+(1A1​ ground state) by probing a long-lived spin-triplet excited-state $\ensuremath{\sim}0.7$ eV above the NV+{\mathrm{NV}}^{+}NV+ ground state. We find a relatively narrow excitation energy range of approximately 0.7--1.1 eV between excitation into an 3E^{3}\mathrm{E}3E state and conversion into the neutral charge state. To provide insight into the thermal stability of the positive charge state, we have calculated binding and diffusion energies for both charged and uncharged systems. We predict, given that the activation energies are only weakly charge state dependent, all three charge states would diffuse in the 1600--$1900{\phantom{\rule{0.16em}{0ex}}}^{\ensuremath{\circ}}\text{C}$ range, but the positive state has a significantly lower binding energy, suggesting that it will dissociate at temperatures around $1000{\phantom{\rule{0.16em}{0ex}}}^{\ensuremath{\circ}}\mathrm{C}$ rather than migrate.
Nitrogen-vacancy (NV) complex in diamond is one of the most prominent solid state defects as the negatively charged NV defect (NV−) is a leading contender for quantum technologies. In quantum information processing applications, NV− is photoexcited that often leads to photoionization to neutral NV defect, NV0, and re-ionization back to NV− should occur to control the S=1 spin of NV−. As a consequence, understanding the photophysics of NV0 is crucial for controlling NV−. Furthermore, recent studies have shown that the S=1/2 electron spin of NV0 can also be initialized and read out at certain conditions that turns single NV0 a potential quantum bit. Quantum optics protocols rest on detailed knowledge on the electronic structure of the given system, which is obviously missing for NV0 in diamond. In this study, we combine the group theory and density functional theory calculations toward exploring the nature of the ground and excited states of NV0. We show that the effective three-electron system of NV0 leads to high correlation effects that make this system very challenging for ab initio simulations.