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Conference on Lasers and Electro-Optics

Maskless Creation of Silicon Vacancy Centers in Photonic Crystal Cavities

Tim Schröder, Matthew E. Trusheim, Michael E. Walsh, Jose L Pacheco, Luozhou Li, Jiabao Zheng, Marco Schukraft, Alp Sipahigil, Ruffin E. Evans, Денис Дмитриевич Сукачев, Edward S. Bielejec, Mikhail D. Lukin, Dirk Englund

Published Jan 1, 2016• 0 citations
Publisher

Abstract

Here, we demonstrate direct, maskless creation of single silicon-vacancy centers in diamond nanostructures via focused ion beam implantation with < 50 nm positioning precision and close to lifetime-limited emission linewidth of ~ 126 ±13 MHz.
DOI
10.1364/cleo_qels.2016.ftu3d.3

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We present the controlled creation of single nitrogen-vacancy (NV) centers via ion implantation at the center of a photonic crystal cavity which is fabricated in an ultrapure, single crystal diamond membrane. High-resolution placement of NV centers is achieved using collimation of a 5 keV-nitrogen ion beam through a pierced tip of an atomic force microscope. We demonstrate coupling of the implanted NV centers' broad band fluorescence to a cavity mode and observe Purcell enhancement of the spontaneous emission. The results are in good agreement with a master equation model for the cavity coupling.