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Beilstein Journal of Nanotechnology

Active and fast charge-state switching of single NV centres in diamond by in-plane Al-Schottky junctions

Christoph Schreyvogel, V. M. Polyakov, Sina Burk, Helmut Fedder, Andrej Denisenko, Felipe Fávaro de Oliveira, Ralf Wunderlich, Jan Meijer, Verena Zuerbig, Jörg Wrachtrup, Christoph Erwin Nebel

Published Nov 16, 2016• 11 citations
Publisher

Abstract

In this paper, we demonstrate an active and fast control of the charge state and hence of the optical and electronic properties of single and near-surface nitrogen-vacancy centres (NV centres) in diamond. This active manipulation is achieved by using a two-dimensional Schottky-diode structure from diamond, i.e., by using aluminium as Schottky contact on a hydrogen terminated diamond surface. By changing the applied potential on the Schottky contact, we are able to actively switch single NV centres between all three charge states NV+, NV0 and NV− on a timescale of 10 to 100 ns, corresponding to a switching frequency of 10–100 MHz. This switching frequency is much higher than the hyperfine interaction frequency between an electron spin (of NV−) and a nuclear spin (of 15N or 13C for example) of 2.66 kHz. This high-frequency charge state switching with a planar diode structure would open the door for many quantum optical applications such as a quantum computer with single NVs for quantum information processing as well as single 13C atoms for long-lifetime storage of quantum information. Furthermore, a control of spectral emission properties of single NVs as a single photon emitters – embedded in photonic structures for example – can be realized which would be vital for quantum communication and cryptography.

DOI
10.3762/bjnano.7.165

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The negatively charged nitrogen-vacancy (NV) centre exhibits outstanding optical and spin properties and thus is very attractive for applications in quantum optics. Up to now an active control of the charge state of near-surface NV centres is difficult and the centres switch in an uncontrolled way between different charge states. In this work, we demonstrate an active control of the charge state of NV centres (implanted 7 nm below the surface) by using an in-plane Schottky diode geometry from aluminium on hydrogen terminated diamond in combination with confocal micro-photoluminescence measurements. The partial quenching of NV-photoluminescence caused by the hole accumulation layer of the hydrogen terminated surface can be recovered by applying reverse bias potentials on this diode, i.e. the NV(0) charge state is depleted while the NV(-) charge state is populated. This charge state conversion is caused by the bias voltage affected modulation of the band bending in the depletion region which shifts the Fermi level across the NV charge transition levels.

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Quantum information in which spin is used as a source of non-classical computation and communication, attracts considerable interest.A long spin coherence (T 2 ) are required toward quantum processing.In addition, small spectral diffusion of single photon for realization of quantum cryptography and building quantum network is needed.The nitrogen-vacancy center (NV) in diamond have long T 2 (up to several milliseconds at room temperature) and become single-photon emitter.Now a days, optically induced charge state interconversion on NV significantly extend T 2 of proximal nuclear spin owing to hyperfine interaction is weaken by motion narrowing.Theory predicts that T 2 exceeding 1 min with preventing heating of diamond due to high laser power excitation.This demonstration show potential of charge state and its non-optical control for spin properties of the NV center.Despite optical illumination is essential for NV to initialize and readout spin, optically induced charge state interconversion causes error in quantum control and spectral diffusion in emitted single photons.In this study, charge state of single NV centers are deterministically controlled by non-optical method.Charge state of single NVs formed in the intrinsic layer of p-in diode are modulated by current injection.Transition rate and its dependence on current is revealed.Recent controllable direction of charge state is limited; however this non-optical charge state control on spin-active negatively charged state (NV -) open the new way to spin related experiments.This study also realize purely populated charge state on the single NVs in phosphorus doped n-type diamond.Charge state is perfectly stabilized into NV -state even under optical illumination (1 µW, 593 nm).After NV - charge state is disturbed by strong laser excitation, state recovered to NV -state under dark condition.This result pave the way to the single spin manipulation in high efficiency and suppress spectral diffusion of single emitted photons. 概要この NV 中心は光励起下(波長: 593 nm, 強度: 1 µW) においても電荷状態が変化しない。また強い光励起によって電荷状態の変化が引き起こ されても、その後 0.28 ms -1 のレートで完全に NV -へと回復することがわかった。この 成果は単一スピン操作の精度、並びに単一光子のスペクトルの安定性向上に繋がる。 Contents 5.2.Raster scan images and fluorescence time traces . . . . . . . . . . . . . .5.3.Single-shot charge-state measurements . . . . . . . . . . . . . . . . . . .5.4.Recombination/recharge rate in the dark condition . . . . . . . . . . . .5.5.Charge-state population and recombination rate under laser excitation .5.6.ODMR and spin coherence measurements . . . . . . . . . . . . . . . . .

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As a potential candidate for quantum computation and metrology, the nitrogen vacancy (NV) center in diamond presents both challenges and opportunities resulting from charge-state conversion. By utilizing different lasers for the photon-induced charge-state conversion, we achieved subdiffraction charge-state manipulation. The charge-state depletion (CSD) microscopy resolution was improved to 4.1 nm by optimizing the laser pulse sequences. Subsequently, the electron spin-state dynamics of adjacent NV centers were selectively detected via the CSD. The experimental results demonstrated that the CSD can improve the spatial resolution of the measurement of NV centers for nanoscale sensing and quantum information. The nitrogen vacancy (NV) in diamond is useful for quantum optics and spintronics due to the long coherence time of its electron spin state. Scientists in China have now used the techniques of super-resolution microscopy to optically control the charge state of an NV defect with a subdiffraction spatial resolution of 4.1 nm. Xiangdong Chen and co-workers from the University of Science and Technology of China in Hefei used a green (532 nm) laser beam to switch the charge state of the defect between NV0 and NV–. They achieved this manipulation on a subdiffraction scale by using specially shaped doughnut laser beams, in common with the principles of super-resolution stimulated emission depletion microscopy. This achievement represents a significant step towards nanoscale sensing and quantum information processing.

arXiv:1410.4668•Light Science & Applications•Jan 2, 2015•128 citations
In this paper, we demonstrate an active and fast control of the charge state and hence of the optical and electronic properties of single and near-surface nitrogen-vacancy centres (NV centres) in diamond. This active manipulation is achieved by using a two-dimensional Schottky-diode structure from diamond, i.e., by using aluminium as Schottky contact on a hydrogen terminated diamond surface. By changing the applied potential on the Schottky contact, we are able to actively switch single NV centres between all three charge states NV+, NV0 and NV− on a timescale of 10 to 100 ns, corresponding to a switching frequency of 10–100 MHz. This switching frequency is much higher than the hyperfine interaction frequency between an electron spin (of NV−) and a nuclear spin (of 15N or 13C for example) of 2.66 kHz. This high-frequency charge state switching with a planar diode structure would open the door for many quantum optical applications such as a quantum computer with single NVs for quantum information processing as well as single 13C atoms for long-lifetime storage of quantum information. Furthermore, a control of spectral emission properties of single NVs as a single photon emitters – embedded in photonic structures for example – can be realized which would be vital for quantum communication and cryptography.
The negatively charged nitrogen-vacancy (NV) centre exhibits outstanding optical and spin properties and thus is very attractive for applications in quantum optics. Up to now an active control of the charge state of near-surface NV centres is difficult and the centres switch in an uncontrolled way between different charge states. In this work, we demonstrate an active control of the charge state of NV centres (implanted 7 nm below the surface) by using an in-plane Schottky diode geometry from aluminium on hydrogen terminated diamond in combination with confocal micro-photoluminescence measurements. The partial quenching of NV-photoluminescence caused by the hole accumulation layer of the hydrogen terminated surface can be recovered by applying reverse bias potentials on this diode, i.e. the NV(0) charge state is depleted while the NV(-) charge state is populated. This charge state conversion is caused by the bias voltage affected modulation of the band bending in the depletion region which shifts the Fermi level across the NV charge transition levels.
Quantum information in which spin is used as a source of non-classical computation and communication, attracts considerable interest.A long spin coherence (T 2 ) are required toward quantum processing.In addition, small spectral diffusion of single photon for realization of quantum cryptography and building quantum network is needed.The nitrogen-vacancy center (NV) in diamond have long T 2 (up to several milliseconds at room temperature) and become single-photon emitter.Now a days, optically induced charge state interconversion on NV significantly extend T 2 of proximal nuclear spin owing to hyperfine interaction is weaken by motion narrowing.Theory predicts that T 2 exceeding 1 min with preventing heating of diamond due to high laser power excitation.This demonstration show potential of charge state and its non-optical control for spin properties of the NV center.Despite optical illumination is essential for NV to initialize and readout spin, optically induced charge state interconversion causes error in quantum control and spectral diffusion in emitted single photons.In this study, charge state of single NV centers are deterministically controlled by non-optical method.Charge state of single NVs formed in the intrinsic layer of p-in diode are modulated by current injection.Transition rate and its dependence on current is revealed.Recent controllable direction of charge state is limited; however this non-optical charge state control on spin-active negatively charged state (NV -) open the new way to spin related experiments.This study also realize purely populated charge state on the single NVs in phosphorus doped n-type diamond.Charge state is perfectly stabilized into NV -state even under optical illumination (1 µW, 593 nm).After NV - charge state is disturbed by strong laser excitation, state recovered to NV -state under dark condition.This result pave the way to the single spin manipulation in high efficiency and suppress spectral diffusion of single emitted photons. 概要この NV 中心は光励起下(波長: 593 nm, 強度: 1 µW) においても電荷状態が変化しない。また強い光励起によって電荷状態の変化が引き起こ されても、その後 0.28 ms -1 のレートで完全に NV -へと回復することがわかった。この 成果は単一スピン操作の精度、並びに単一光子のスペクトルの安定性向上に繋がる。 Contents 5.2.Raster scan images and fluorescence time traces . . . . . . . . . . . . . .5.3.Single-shot charge-state measurements . . . . . . . . . . . . . . . . . . .5.4.Recombination/recharge rate in the dark condition . . . . . . . . . . . .5.5.Charge-state population and recombination rate under laser excitation .5.6.ODMR and spin coherence measurements . . . . . . . . . . . . . . . . .
Charge-states modulation of nitrogen-vacancy (NV) centers incorporated into single crystal diamond films attracts increasing attention for solid-state qubits applications. Here, we discuss the electro- and photoluminescence emission properties of NV centers incorporated by gas phase nitrogen delta-doping of the intrinsic diamond layer of a positive-intrinsic-negative (PIN) junction diode. The experiments show that the charge state of NV centers can be intentionally controlled by applying well-defined external bias voltages. It can be switched from the negatively charged state NV− to the neutral charged state NV0 when a strong forward bias potential is applied. This can be switched back by application of reverse potentials. These results will be discussed assuming basic electronic properties of diamond PIN diodes, including the variation of spectral properties as well as the dynamics of charge state transitions.
The nitrogen-vacancy (NV) centre in diamond is a promising candidate for a solid-state qubit. However, its charge state is known to be unstable, discharging from the qubit state NV− into the neutral state NV0 under various circumstances. Here we demonstrate that the charge state can be controlled by an electrolytic gate electrode. This way, single centres can be switched from an unknown non-fluorescent state into the neutral charge state NV0, and the population of an ensemble of centres can be shifted from NV0 to NV−. Numerical simulations confirm the manipulation of the charge state to be induced by the gate-controlled shift of the Fermi level at the diamond surface. This result opens the way to a dynamic control of transitions between charge states and to explore hitherto inaccessible states, such as NV+. Point defects in diamond in the form of nitrogen vacancy centres are believed to be promising candidates for qubits in quantum computers. Grotzet al. present a method for manipulating the charge state of nitrogen vacancies using an electrolytic gate electrode.
The ability to control the charge and spin states of nitrogen-vacancy (NV) centers near the diamond surface is of pivotal importance for quantum applications. Hydrogen-terminated diamond is promising for long spin coherence times and ease of controlling the charge states due to the low density of surface defects. However, it has so far been challenging to create negatively charged single NV centers with controllable spin states beneath a hydrogen-terminated surface because atmospheric adsorbates that act as acceptors induce surface holes. In this study, we optically detected the magnetic resonance of shallow single NV centers in hydrogen-terminated diamond through precise control of the nitrogen implantation fluence. Furthermore, we found that the probability of detecting the resonance was enhanced by reducing the surface acceptor density through passivation of the hydrogen-terminated surface with hexagonal boron nitride without air exposure. This control method opens up new opportunities for using NV centers in quantum applications.
As a potential candidate for quantum computation and metrology, the nitrogen vacancy (NV) center in diamond presents both challenges and opportunities resulting from charge-state conversion. By utilizing different lasers for the photon-induced charge-state conversion, we achieved subdiffraction charge-state manipulation. The charge-state depletion (CSD) microscopy resolution was improved to 4.1 nm by optimizing the laser pulse sequences. Subsequently, the electron spin-state dynamics of adjacent NV centers were selectively detected via the CSD. The experimental results demonstrated that the CSD can improve the spatial resolution of the measurement of NV centers for nanoscale sensing and quantum information. The nitrogen vacancy (NV) in diamond is useful for quantum optics and spintronics due to the long coherence time of its electron spin state. Scientists in China have now used the techniques of super-resolution microscopy to optically control the charge state of an NV defect with a subdiffraction spatial resolution of 4.1 nm. Xiangdong Chen and co-workers from the University of Science and Technology of China in Hefei used a green (532 nm) laser beam to switch the charge state of the defect between NV0 and NV–. They achieved this manipulation on a subdiffraction scale by using specially shaped doughnut laser beams, in common with the principles of super-resolution stimulated emission depletion microscopy. This achievement represents a significant step towards nanoscale sensing and quantum information processing.