Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Nature Communications

Charge state manipulation of qubits in diamond

Bernhard Grotz, Moritz V. Hauf, Markus Dankerl, Boris Naydenov, Sébastien Pezzagna, Jan Meijer, Fedor Jelezko, Jörg Wrachtrup, M. Stutzmann, Friedemann Reinhard, Jose Antonio Garrido

Published Mar 6, 2012• 248 citations
Publisher

Abstract

The nitrogen-vacancy (NV) centre in diamond is a promising candidate for a solid-state qubit. However, its charge state is known to be unstable, discharging from the qubit state NV− into the neutral state NV0 under various circumstances. Here we demonstrate that the charge state can be controlled by an electrolytic gate electrode. This way, single centres can be switched from an unknown non-fluorescent state into the neutral charge state NV0, and the population of an ensemble of centres can be shifted from NV0 to NV−. Numerical simulations confirm the manipulation of the charge state to be induced by the gate-controlled shift of the Fermi level at the diamond surface. This result opens the way to a dynamic control of transitions between charge states and to explore hitherto inaccessible states, such as NV+. Point defects in diamond in the form of nitrogen vacancy centres are believed to be promising candidates for qubits in quantum computers. Grotzet al. present a method for manipulating the charge state of nitrogen vacancies using an electrolytic gate electrode.

DOI
10.1038/ncomms1729

Related papers

Active and fast charge-state switching of single NV centres in diamond by in-plane Al-Schottky junctions

Christoph Schreyvogel, V. M. Polyakov, Sina Burk +8 more

In this paper, we demonstrate an active and fast control of the charge state and hence of the optical and electronic properties of single and near-surface nitrogen-vacancy centres (NV centres) in diamond. This active manipulation is achieved by using a two-dimensional Schottky-diode structure from diamond, i.e., by using aluminium as Schottky contact on a hydrogen terminated diamond surface. By changing the applied potential on the Schottky contact, we are able to actively switch single NV centres between all three charge states NV+, NV0 and NV− on a timescale of 10 to 100 ns, corresponding to a switching frequency of 10–100 MHz. This switching frequency is much higher than the hyperfine interaction frequency between an electron spin (of NV−) and a nuclear spin (of 15N or 13C for example) of 2.66 kHz. This high-frequency charge state switching with a planar diode structure would open the door for many quantum optical applications such as a quantum computer with single NVs for quantum information processing as well as single 13C atoms for long-lifetime storage of quantum information. Furthermore, a control of spectral emission properties of single NVs as a single photon emitters – embedded in photonic structures for example – can be realized which would be vital for quantum communication and cryptography.

Beilstein Journal of Nanotechnology•Nov 16, 2016•11 citations

Tunable light emission from nitrogen-vacancy centers in single crystal diamond PIN diodes

Hiromitsu Kato, Marco T. Wolfer, Christoph Schreyvogel +5 more

Charge-states modulation of nitrogen-vacancy (NV) centers incorporated into single crystal diamond films attracts increasing attention for solid-state qubits applications. Here, we discuss the electro- and photoluminescence emission properties of NV centers incorporated by gas phase nitrogen delta-doping of the intrinsic diamond layer of a positive-intrinsic-negative (PIN) junction diode. The experiments show that the charge state of NV centers can be intentionally controlled by applying well-defined external bias voltages. It can be switched from the negatively charged state NV− to the neutral charged state NV0 when a strong forward bias potential is applied. This can be switched back by application of reverse potentials. These results will be discussed assuming basic electronic properties of diamond PIN diodes, including the variation of spectral properties as well as the dynamics of charge state transitions.

Applied Physics Letters•Apr 15, 2013•73 citations

Quenching dynamics and photo-physics of nitrogen-vacancy centres in nanodiamonds

Reece P. Roberts, Mathieu L. Juan, Gabriel Molina‐Terriza

The Nitrogen Vacancy (NV) centre is a point defect consisting of a nitrogen-vacancy lattice pair embedded in diamond. The NV centre has two stable charge states, the neutral charge state and the (NV0) and the negatively charged state (NV-) with photo induced interconversion between these two states [1]. The NV centre is an intensively studied material that has shown a wide range of applications in both Physics and Biology due to its high stability and interesting optical properties. Applications ranging from imaging and tracking biological structures, to nanoscale sensing, to applications in highly controlled quantum experiments have all been realised using these centres [2, 3]. However, these applications rely only on the NV-charge stage and often neglect the effects of the neutral charge state. As a result the NV0charge state has not received the same level of study as the NV-state and the effects of the interconversion between the two states are poorly understood, even though it can have a significant effect on the emitted fluorescence.

Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)•Jun 1, 2017•0 citations

Subdiffraction optical manipulation of the charge state of nitrogen vacancy center in diamond

Xiang-Dong Chen, Chang‐Ling Zou, Zhao-Jun Gong +3 more

As a potential candidate for quantum computation and metrology, the nitrogen vacancy (NV) center in diamond presents both challenges and opportunities resulting from charge-state conversion. By utilizing different lasers for the photon-induced charge-state conversion, we achieved subdiffraction charge-state manipulation. The charge-state depletion (CSD) microscopy resolution was improved to 4.1 nm by optimizing the laser pulse sequences. Subsequently, the electron spin-state dynamics of adjacent NV centers were selectively detected via the CSD. The experimental results demonstrated that the CSD can improve the spatial resolution of the measurement of NV centers for nanoscale sensing and quantum information. The nitrogen vacancy (NV) in diamond is useful for quantum optics and spintronics due to the long coherence time of its electron spin state. Scientists in China have now used the techniques of super-resolution microscopy to optically control the charge state of an NV defect with a subdiffraction spatial resolution of 4.1 nm. Xiangdong Chen and co-workers from the University of Science and Technology of China in Hefei used a green (532 nm) laser beam to switch the charge state of the defect between NV0 and NV–. They achieved this manipulation on a subdiffraction scale by using specially shaped doughnut laser beams, in common with the principles of super-resolution stimulated emission depletion microscopy. This achievement represents a significant step towards nanoscale sensing and quantum information processing.

arXiv:1410.4668•Light Science & Applications•Jan 2, 2015•128 citations

Probing NV and SiV charge state dynamics using high-voltage nanosecond pulse and photoluminescence spectral analysis

Artur Pambukhchyan, Sizhe Weng, Indu Aravind +2 more

Abstract Nitrogen-vacancy (NV) and silicon-vacancy (SiV) color defects in diamond are promising systems for applications in quantum technology. The NV and SiV centers have multiple charge states, and their charge states have different electronic, optical and spin properties. For the NV centers, most investigations for quantum sensing applications are targeted on the negatively charged NV (NV−), and it is important for the NV centers to be in the NV− state. However, it is known that the NV centers are converted to the neutrally charged state (NV0) under laser excitation. An energetically favorable charge state for the NV and SiV centers depends on their local environments. It is essential to understand and control the charge state dynamics for their quantum applications. In this work, we discuss the charge state dynamics of NV and SiV centers under high-voltage nanosecond pulse discharges. The NV and SiV centers coexist in the diamond crystal. The high-voltage pulses enable manipulating the charge states efficiently. These voltage-induced changes in charge states are probed by their photoluminescence spectral analysis. The analysis result from the present experiment shows that the high-voltage nanosecond pulses cause shifts of the chemical potential and can convert the charge states of NV and SiV centers with the transition rates of ∼MHz. This result also indicates that the major population of the SiV centers in the sample is the doubly negatively charged state (SiV2−), which is often overlooked because of its non-fluorescent and non-magnetic nature. This demonstration paves a path for a method of rapid manipulation of the NV and SiV charge states in the future.

arXiv:2307.06433•Materials for Quantum Technology•Sep 1, 2023•4 citations

Nitrogen-vacancy centers in diamond: discovery of additional electronic states

Minh Tuan Luu, Ali Tayefeh Younesi, Ronald Ulbricht

Abstract Nitrogen-vacancy (NV) defect centers in diamond are key to applications in quantum sensing and quantum computing. They create localized electronic states in the diamond lattice with distinct population relaxation pathways following photoexcitation that ultimately enable its unique properties. The defect is known to exist in two charge states: neutral and negative, with respectively one and two known optically-active electronic transitions. Here, we report on the observation of a large number of hitherto undiscovered excited electronic states in both charge states as evidenced by distinct optical transitions in the infrared to ultraviolet part of the spectrum. These transitions are observed by monitoring the electronic relaxation of NV centers after photoexcitation using transient absorption spectroscopy, directly probing transient phenomena occurring on timescales from femtoseconds to microseconds. We also for the first time probed the electron transfer dynamics from the 3 E state of NV− to nearby single-substitutional nitrogen defects (N s ) that leads to the well-known effect of NV photoluminescence quenching.

Materials for Quantum Technology•Jul 10, 2024•16 citations
The nitrogen-vacancy (NV) centre in diamond is a promising candidate for a solid-state qubit. However, its charge state is known to be unstable, discharging from the qubit state NV− into the neutral state NV0 under various circumstances. Here we demonstrate that the charge state can be controlled by an electrolytic gate electrode. This way, single centres can be switched from an unknown non-fluorescent state into the neutral charge state NV0, and the population of an ensemble of centres can be shifted from NV0 to NV−. Numerical simulations confirm the manipulation of the charge state to be induced by the gate-controlled shift of the Fermi level at the diamond surface. This result opens the way to a dynamic control of transitions between charge states and to explore hitherto inaccessible states, such as NV+. Point defects in diamond in the form of nitrogen vacancy centres are believed to be promising candidates for qubits in quantum computers. Grotzet al. present a method for manipulating the charge state of nitrogen vacancies using an electrolytic gate electrode.
In this paper, we demonstrate an active and fast control of the charge state and hence of the optical and electronic properties of single and near-surface nitrogen-vacancy centres (NV centres) in diamond. This active manipulation is achieved by using a two-dimensional Schottky-diode structure from diamond, i.e., by using aluminium as Schottky contact on a hydrogen terminated diamond surface. By changing the applied potential on the Schottky contact, we are able to actively switch single NV centres between all three charge states NV+, NV0 and NV− on a timescale of 10 to 100 ns, corresponding to a switching frequency of 10–100 MHz. This switching frequency is much higher than the hyperfine interaction frequency between an electron spin (of NV−) and a nuclear spin (of 15N or 13C for example) of 2.66 kHz. This high-frequency charge state switching with a planar diode structure would open the door for many quantum optical applications such as a quantum computer with single NVs for quantum information processing as well as single 13C atoms for long-lifetime storage of quantum information. Furthermore, a control of spectral emission properties of single NVs as a single photon emitters – embedded in photonic structures for example – can be realized which would be vital for quantum communication and cryptography.
Charge-states modulation of nitrogen-vacancy (NV) centers incorporated into single crystal diamond films attracts increasing attention for solid-state qubits applications. Here, we discuss the electro- and photoluminescence emission properties of NV centers incorporated by gas phase nitrogen delta-doping of the intrinsic diamond layer of a positive-intrinsic-negative (PIN) junction diode. The experiments show that the charge state of NV centers can be intentionally controlled by applying well-defined external bias voltages. It can be switched from the negatively charged state NV− to the neutral charged state NV0 when a strong forward bias potential is applied. This can be switched back by application of reverse potentials. These results will be discussed assuming basic electronic properties of diamond PIN diodes, including the variation of spectral properties as well as the dynamics of charge state transitions.
The Nitrogen Vacancy (NV) centre is a point defect consisting of a nitrogen-vacancy lattice pair embedded in diamond. The NV centre has two stable charge states, the neutral charge state and the (NV0) and the negatively charged state (NV-) with photo induced interconversion between these two states [1]. The NV centre is an intensively studied material that has shown a wide range of applications in both Physics and Biology due to its high stability and interesting optical properties. Applications ranging from imaging and tracking biological structures, to nanoscale sensing, to applications in highly controlled quantum experiments have all been realised using these centres [2, 3]. However, these applications rely only on the NV-charge stage and often neglect the effects of the neutral charge state. As a result the NV0charge state has not received the same level of study as the NV-state and the effects of the interconversion between the two states are poorly understood, even though it can have a significant effect on the emitted fluorescence.
As a potential candidate for quantum computation and metrology, the nitrogen vacancy (NV) center in diamond presents both challenges and opportunities resulting from charge-state conversion. By utilizing different lasers for the photon-induced charge-state conversion, we achieved subdiffraction charge-state manipulation. The charge-state depletion (CSD) microscopy resolution was improved to 4.1 nm by optimizing the laser pulse sequences. Subsequently, the electron spin-state dynamics of adjacent NV centers were selectively detected via the CSD. The experimental results demonstrated that the CSD can improve the spatial resolution of the measurement of NV centers for nanoscale sensing and quantum information. The nitrogen vacancy (NV) in diamond is useful for quantum optics and spintronics due to the long coherence time of its electron spin state. Scientists in China have now used the techniques of super-resolution microscopy to optically control the charge state of an NV defect with a subdiffraction spatial resolution of 4.1 nm. Xiangdong Chen and co-workers from the University of Science and Technology of China in Hefei used a green (532 nm) laser beam to switch the charge state of the defect between NV0 and NV–. They achieved this manipulation on a subdiffraction scale by using specially shaped doughnut laser beams, in common with the principles of super-resolution stimulated emission depletion microscopy. This achievement represents a significant step towards nanoscale sensing and quantum information processing.
Abstract Nitrogen-vacancy (NV) and silicon-vacancy (SiV) color defects in diamond are promising systems for applications in quantum technology. The NV and SiV centers have multiple charge states, and their charge states have different electronic, optical and spin properties. For the NV centers, most investigations for quantum sensing applications are targeted on the negatively charged NV (NV−), and it is important for the NV centers to be in the NV− state. However, it is known that the NV centers are converted to the neutrally charged state (NV0) under laser excitation. An energetically favorable charge state for the NV and SiV centers depends on their local environments. It is essential to understand and control the charge state dynamics for their quantum applications. In this work, we discuss the charge state dynamics of NV and SiV centers under high-voltage nanosecond pulse discharges. The NV and SiV centers coexist in the diamond crystal. The high-voltage pulses enable manipulating the charge states efficiently. These voltage-induced changes in charge states are probed by their photoluminescence spectral analysis. The analysis result from the present experiment shows that the high-voltage nanosecond pulses cause shifts of the chemical potential and can convert the charge states of NV and SiV centers with the transition rates of ∼MHz. This result also indicates that the major population of the SiV centers in the sample is the doubly negatively charged state (SiV2−), which is often overlooked because of its non-fluorescent and non-magnetic nature. This demonstration paves a path for a method of rapid manipulation of the NV and SiV charge states in the future.
Abstract Nitrogen-vacancy (NV) defect centers in diamond are key to applications in quantum sensing and quantum computing. They create localized electronic states in the diamond lattice with distinct population relaxation pathways following photoexcitation that ultimately enable its unique properties. The defect is known to exist in two charge states: neutral and negative, with respectively one and two known optically-active electronic transitions. Here, we report on the observation of a large number of hitherto undiscovered excited electronic states in both charge states as evidenced by distinct optical transitions in the infrared to ultraviolet part of the spectrum. These transitions are observed by monitoring the electronic relaxation of NV centers after photoexcitation using transient absorption spectroscopy, directly probing transient phenomena occurring on timescales from femtoseconds to microseconds. We also for the first time probed the electron transfer dynamics from the 3 E state of NV− to nearby single-substitutional nitrogen defects (N s ) that leads to the well-known effect of NV photoluminescence quenching.