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Acta Physica Sinica

OPTICAL BISTABILITY OF INTERSUBBAN TRANSITIONS IN A SEMICONDUCTOR SUPERLATTICE

Guozhong Zhao, PAN SHAO-HUA, 中国科学院物理研究所,北京100080

Published Jan 1, 1996• 0 citations
Publisher

Abstract

The optical bistability (OB) of intersubband transitions in a semiconductor superlattice is stu -died by applying the general formalism of the Kronig-Penney model and density matrix method. The Maxwell-Bloch (MB) equations of two-subband model are derived, and the OB state equation for a ring cavity is obtained from the stationary solution of the MB equations. The conditions for realizing the OB and its characteristics are discussed.

DOI
10.7498/aps.45.929

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The optical bistability (OB) of intersubband transitions in a semiconductor superlattice is stu -died by applying the general formalism of the Kronig-Penney model and density matrix method. The Maxwell-Bloch (MB) equations of two-subband model are derived, and the OB state equation for a ring cavity is obtained from the stationary solution of the MB equations. The conditions for realizing the OB and its characteristics are discussed.
We have derived Maxwell-Bloch equations of a two-subband model suitable for studying intersubband-transition induced optical-nonlinearities of semiconductor superlattices (SLs). Analytical expressions and numerical illustrations for absorptive and dispersive optical bistabilities (OBs) of SL etalons are given. Both OBs can be realized in infrared region with high frequency selectivity, and their bistable domains and hysteresis loops are much larger than those of a two-level system. The dispersive OB is preferable due to its lower value of the input power.
The burning-hole behavior of intersubband absorption in semiconductor superlattices is studied by means of the two- subband model. The Maxwell-Bloch equations of laser- superlattice interaction are derived and solved at the steady condition. The absorptive coefficient as a function of the frequency of probe laser is given. The theoretical and numerical results how that the burning hole of the absorption-frequency curve occurs when the pump laser is enough strong. The burning-hole behavior is related closely to the structure of the semiconductor superlattices.
We investigate optical bistability in intersubband transitions of an asymmetric semiconductor quantum well structure that has equidistant transitions between three subbands of the system and is placed in a unidirectional cavity. The system is simultaneously coupled by a fundamental field and its second harmonic. The second harmonic field acts as a control field and significantly influences the optical bistability. In addition, the two-color coherent control of optical bistability by the relative phase of the fundamental and the second harmonic fields is shown. The influence of the electronic cooperation parameter on the OB behavior is also discussed. This investigation may be used for optimizing and controlling the optical switching process in the SQW solid-state system, which is much more practical than that in the atomic system because of its flexible design and the controllable interference strength.