Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Physical review. B, Condensed matter

Optical saturation of intersubband absorption in semiconductor superlattices

Shao-hua Pan, Simin Feng

Published Oct 15, 1991• 19 citations
Publisher

Abstract

The third-order nonlinear intersubband absorption in superlattices is studied theoretically by means of a general formalism of the Kronig-Penney model given recently. It is shown that there is a general relation between the tunnel bandwidth and the minimum optical saturation intensity. The physical origin of this relation is analyzed.
DOI
10.1103/physrevb.44.8165

Related papers

TUNNEL BROADENING EFFECT ON INTERSUBBAND OPTICAL SATURATION IN SUPERLATTICES

PAN SHAO-HUA, FENG SI-MIN, Cui Dafu +2 more

By means of a new formalism of the Kronig-Penney model developed recently, the third order nonlinear optical effect of intersubband transitions in superlattices is studied. It is shown that there is a general relation between optical saturation intensity and tunnel bandwidth. The physical mechanism of this relation is analyzed.

Acta Physica Sinica•Jan 1, 1993•0 citations

TUNNEL BROADENING EFFECT ON INTERSUBBAN OOPTICAL SATURATION INS UPERLATTICES

Pan Shao-hua,Feng Si-min,Cui Da-fu

摘要 本文运用Kroning-Penney 模型新形式, 研究超晶格子带间光吸收的三阶非线性效应, 发现不论量子阱参数(如阱宽、垒宽和垒高等)如何改变, 光吸收饱和强度与隧穿谱宽之间存在着一种较普遍的关系, 并阐明了这种依从关系的物理机制. Abstract By means of a new formalism of the Kronig-Ponney model developed recently, the third order nonlinear optical effect of intersubband transition In superlattices is studied. It is shown that there is a general relation between optical saturation intensity and tunnel bandwidth. The physical mechanism of this relation is analyzed. 作者及机构信息 潘少华;冯思民;崔大复;杨国祯 1. 中国科学院物理研究所, Authors and contacts Pan Shao-hua Feng Si-min Cui Da-fu Yan Guo-zhen 参考文献 施引文献

Acta Physica Sinica•Jan 1, 1991•0 citations

Calculation of Nonlinear Intersubband Optical Absorption in Asymmetric Quantum Wells

Peng Tan

In the past few years advance in nanofabrication techniques have made it possible to make well-like compound semiconductor structures of low nanometer size.In these structures,the state of the electron in the direction perpendicular to the length of the well is quantized with sufficiently large separation in energy levels and the motion of the electron parallel to the length is that of a quasi-free electron.One of the most remarkable properties of these one-dimensional electron system is that the optical transitions between the size-quantized subbands are feasible.The result shows there is a large optical nonlinearities in asymmetric quantum wells.The problem of optical saturation of intersubband absorption has recently attracted considerable attention.The problem is very important to the development of superlattice devices such as fast infrared detectors and(modulators) because one needs to know the range of input optical intensities for which linear operation is(possible.) The analytical expression of the linear and the third-order nonlinear optical intersubband absorption coefficients are obtained in Pschl-Teller wells using the density matrix formalism taking into account the(intrasubband) relaxation.Since there are two adjustable parameters κ and λ in Pschl-Teller wells,the shapes of the wells will change with the change of the parameters κ and λ,accordingly the linear and the third-order nonlinear optical absorption coefficients will change with the parameters κ and λ.It is shown that the optical absorption coefficient depends on the parameter,and the optical intensity strongly. The absorption saturation will occur with I increase.Numerical results are presented for a typical AlGaAs/GaAs Pschl-Teller well.

Chinese Journal of Luminescence•Jan 1, 2006•0 citations

OPTICAL BISTABILITY OF INTERSUBBAN TRANSITIONS IN A SEMICONDUCTOR SUPERLATTICE

Guozhong Zhao, PAN SHAO-HUA, 中国科学院物理研究所,北京100080

The optical bistability (OB) of intersubband transitions in a semiconductor superlattice is stu -died by applying the general formalism of the Kronig-Penney model and density matrix method. The Maxwell-Bloch (MB) equations of two-subband model are derived, and the OB state equation for a ring cavity is obtained from the stationary solution of the MB equations. The conditions for realizing the OB and its characteristics are discussed.

Acta Physica Sinica•Jan 1, 1996•0 citations

Nonlinear intersubband optical absorption in a semiconductor quantum well

Doyeol Ahn, S. L. Chuang

The third-order nonlinear intersubband absorption in a semiconductor quantum well is studied theoretically using the density matrix formalism including intrasubband relaxation. It is shown that the peak absorption is reduced by half for an optical intensity 1 MW/cm2 for the well size L=126.5 Å with 3.0×1016/cm3 electrons.

Journal of Applied Physics•Oct 1, 1987•107 citations

Intersubband absorption saturation in multiple-quantum-well structures: The sheet model approach

Miroslaw Zaluzny, C. Nalewajko

We present a theoretical formalism, based on the transfer-matrix method and the so-called sheet model, describing light propagation in multiple-quantum-well (MQW) structures in the range of the saturated intersubband absorption. A commonly used total internal reflection geometry is considered. Intensity of the reflected light as a function of the input intensity is calculated for two-level $\mathrm{GaAs}/{\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{As}$ MQW. Numerical simulations show that the optical nonlinearity of the structures can be greatly modified by optical interference effects. In the case of sufficiently thick structures and grazing angle of incidence the multiple reflections inside the MQW can lead even to bistability.

Physical review. B, Condensed matter•Dec 17, 2003•9 citations
摘要 本文运用Kroning-Penney 模型新形式, 研究超晶格子带间光吸收的三阶非线性效应, 发现不论量子阱参数(如阱宽、垒宽和垒高等)如何改变, 光吸收饱和强度与隧穿谱宽之间存在着一种较普遍的关系, 并阐明了这种依从关系的物理机制. Abstract By means of a new formalism of the Kronig-Ponney model developed recently, the third order nonlinear optical effect of intersubband transition In superlattices is studied. It is shown that there is a general relation between optical saturation intensity and tunnel bandwidth. The physical mechanism of this relation is analyzed. 作者及机构信息 潘少华;冯思民;崔大复;杨国祯 1. 中国科学院物理研究所, Authors and contacts Pan Shao-hua Feng Si-min Cui Da-fu Yan Guo-zhen 参考文献 施引文献
In the past few years advance in nanofabrication techniques have made it possible to make well-like compound semiconductor structures of low nanometer size.In these structures,the state of the electron in the direction perpendicular to the length of the well is quantized with sufficiently large separation in energy levels and the motion of the electron parallel to the length is that of a quasi-free electron.One of the most remarkable properties of these one-dimensional electron system is that the optical transitions between the size-quantized subbands are feasible.The result shows there is a large optical nonlinearities in asymmetric quantum wells.The problem of optical saturation of intersubband absorption has recently attracted considerable attention.The problem is very important to the development of superlattice devices such as fast infrared detectors and(modulators) because one needs to know the range of input optical intensities for which linear operation is(possible.) The analytical expression of the linear and the third-order nonlinear optical intersubband absorption coefficients are obtained in Pschl-Teller wells using the density matrix formalism taking into account the(intrasubband) relaxation.Since there are two adjustable parameters κ and λ in Pschl-Teller wells,the shapes of the wells will change with the change of the parameters κ and λ,accordingly the linear and the third-order nonlinear optical absorption coefficients will change with the parameters κ and λ.It is shown that the optical absorption coefficient depends on the parameter,and the optical intensity strongly. The absorption saturation will occur with I increase.Numerical results are presented for a typical AlGaAs/GaAs Pschl-Teller well.
We present a theoretical formalism, based on the transfer-matrix method and the so-called sheet model, describing light propagation in multiple-quantum-well (MQW) structures in the range of the saturated intersubband absorption. A commonly used total internal reflection geometry is considered. Intensity of the reflected light as a function of the input intensity is calculated for two-level $\mathrm{GaAs}/{\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{As}$ MQW. Numerical simulations show that the optical nonlinearity of the structures can be greatly modified by optical interference effects. In the case of sufficiently thick structures and grazing angle of incidence the multiple reflections inside the MQW can lead even to bistability.