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Optical Materials

Controllable transmission photonic band gap and all-optical switching behaviors of 1-D InAs/GaAs quantum-dot photonic crystal

Zhenhua Hu, Bowen Xiang, Yunsheng Xing

Published Oct 22, 2016• 10 citations
Publisher
DOI
10.1016/j.optmat.2016.10.028

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Slow and fast light propagation and controllable switch at λ = 1.55 µ m in a photonic crystal with a defect layer doped by an InAs/GaAs quintuple-coupled quantum dot molecule nanostructure

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Abstract The transient and steady-state behavior of the probe absorption and dispersion at 1.55 µ m wavelength through a 1D photonic crystal with a defect layer doped by an InAs/GaAs quintuple quantum dot molecule nanostructure are discussed. We show that the group velocity of a light pulse can be controlled just by controlling the rate of incoherent pumping and interdot tunneling. We also investigate the electro-optical switching time of light propagation from subluminal to superluminal or vice versa. The time required to switch from subluminal to superluminal light propagation is found to be in the range 17–34 ps. Such controllable optical properties in a 1D photonic crystal with a defect layer may provide some new possibilities for technological applications in optoelectronics, solid-state quantum information science and systems dealing with signal processing.

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Motivated by developments in quantum information science, much recent effort has been directed toward coupling individual quantum emitters to optical microcavities. Such systems can be used to produce single photons on demand, enable nonlinear optical switching at a single photon level, and implement functional nodes of a quantum network, where the emitters serve as processing nodes and photons are used for long-distance quantum communication. For many of these practical applications, it is important to develop techniques that allow one to generate outgoing single photons of desired frequency and bandwidth, enabling hybrid networks connecting different types of emitters and long-distance transmission over telecommunications wavelengths. Here, we propose a novel approach that makes use of a nonlinear optical resonator, in which the single photon originating from the atom-like emitter is directly converted into a photon with desired frequency and bandwidth using the intracavity nonlinearity. As specific examples, we discuss a high-finesse, TE-TM double-mode photonic crystal cavity design that allows for direct generation of single photons at telecom wavelengths starting from an InAs/GaAs quantum dot with a 950 nm transition wavelength, and a scheme for direct optical coupling of such a quantum dot with a diamond nitrogen-vacancy center at 637 nm.

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Controlling the frequencies of photons emitted by a single quantum dot in a one-dimensional photonic crystal

A I Garifullin, R. Kh. Gainutdinov, Хамадеев Марат Актасович

Subject of study. A single InAs quantum dot in a one-dimensional photonic crystal based on GaAs is examined. Aim of study. The aim of this study is to develop a method for controlling photon emission frequencies from a single quantum dot within a one-dimensional photonic crystal based on changes in the electromagnetic mass of an electron in the photonic crystal medium. Method. The proposed approach leverages the effect of changing the electromagnetic mass of an electron in the photonic crystal medium, manifesting as corrections to electron energy levels depending on the optical density of the medium. To control this density, the injection of free charge carriers and the quadratic electro-optic Kerr effect are proposed. Main results. The feasibility of in situ control of photon emission frequencies from a quantum dot was demonstrated using quantum transitions between the p- and s-states of a hydrogen-like InAs quantum dot situated in the air voids of a one-dimensional GaAs photonic crystal. This control is achieved through the effect of changing the electromagnetic mass of an electron, as well as tuning the refractive index of the photonic crystal via free charge carrier injection and the electro-optic Kerr effect. Calculations indicate that the photon energy control range available in experiments is limited to several tens of microelectronvolts, restricting practical applicability, and the observed displacement effect is smaller than experimentally recorded values. However, the energy level displacement, influenced by the quantum electrodynamic effect under investigation, exhibits a quadratic dependence on the refractive index of the material forming the photonic crystal. Consequently, the method is expected to scale significantly with increasing optical density. Such photonic crystals could be constructed using metamaterials with a high refractive index. Practical significance. The findings of this study, centered on developing a method for controlling photon emission frequencies from a single quantum dot in a one-dimensional photonic crystal, lay the groundwork for photon-emitter interfaces. These interfaces will incorporate key quantum functionalities, including photonic qubits, single-photon light sources, and nonlinear quantum photon-photon gates.

Journal of Optical Technology•Jun 1, 2024•2 citations
Abstract The transient and steady-state behavior of the probe absorption and dispersion at 1.55 µ m wavelength through a 1D photonic crystal with a defect layer doped by an InAs/GaAs quintuple quantum dot molecule nanostructure are discussed. We show that the group velocity of a light pulse can be controlled just by controlling the rate of incoherent pumping and interdot tunneling. We also investigate the electro-optical switching time of light propagation from subluminal to superluminal or vice versa. The time required to switch from subluminal to superluminal light propagation is found to be in the range 17–34 ps. Such controllable optical properties in a 1D photonic crystal with a defect layer may provide some new possibilities for technological applications in optoelectronics, solid-state quantum information science and systems dealing with signal processing.
Motivated by developments in quantum information science, much recent effort has been directed toward coupling individual quantum emitters to optical microcavities. Such systems can be used to produce single photons on demand, enable nonlinear optical switching at a single photon level, and implement functional nodes of a quantum network, where the emitters serve as processing nodes and photons are used for long-distance quantum communication. For many of these practical applications, it is important to develop techniques that allow one to generate outgoing single photons of desired frequency and bandwidth, enabling hybrid networks connecting different types of emitters and long-distance transmission over telecommunications wavelengths. Here, we propose a novel approach that makes use of a nonlinear optical resonator, in which the single photon originating from the atom-like emitter is directly converted into a photon with desired frequency and bandwidth using the intracavity nonlinearity. As specific examples, we discuss a high-finesse, TE-TM double-mode photonic crystal cavity design that allows for direct generation of single photons at telecom wavelengths starting from an InAs/GaAs quantum dot with a 950 nm transition wavelength, and a scheme for direct optical coupling of such a quantum dot with a diamond nitrogen-vacancy center at 637 nm.
Subject of study. A single InAs quantum dot in a one-dimensional photonic crystal based on GaAs is examined. Aim of study. The aim of this study is to develop a method for controlling photon emission frequencies from a single quantum dot within a one-dimensional photonic crystal based on changes in the electromagnetic mass of an electron in the photonic crystal medium. Method. The proposed approach leverages the effect of changing the electromagnetic mass of an electron in the photonic crystal medium, manifesting as corrections to electron energy levels depending on the optical density of the medium. To control this density, the injection of free charge carriers and the quadratic electro-optic Kerr effect are proposed. Main results. The feasibility of in situ control of photon emission frequencies from a quantum dot was demonstrated using quantum transitions between the p- and s-states of a hydrogen-like InAs quantum dot situated in the air voids of a one-dimensional GaAs photonic crystal. This control is achieved through the effect of changing the electromagnetic mass of an electron, as well as tuning the refractive index of the photonic crystal via free charge carrier injection and the electro-optic Kerr effect. Calculations indicate that the photon energy control range available in experiments is limited to several tens of microelectronvolts, restricting practical applicability, and the observed displacement effect is smaller than experimentally recorded values. However, the energy level displacement, influenced by the quantum electrodynamic effect under investigation, exhibits a quadratic dependence on the refractive index of the material forming the photonic crystal. Consequently, the method is expected to scale significantly with increasing optical density. Such photonic crystals could be constructed using metamaterials with a high refractive index. Practical significance. The findings of this study, centered on developing a method for controlling photon emission frequencies from a single quantum dot in a one-dimensional photonic crystal, lay the groundwork for photon-emitter interfaces. These interfaces will incorporate key quantum functionalities, including photonic qubits, single-photon light sources, and nonlinear quantum photon-photon gates.