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Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)

Cavity build-up and transient fluctuations in optical-fibre-loop memories

M. Calzavara

Published Aug 24, 2005• 0 citations
Publisher
DOI
10.1109/cleoe.1994.636474

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Cavity build-up and transient fluctuations in optical-fibre-loop memories

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The use of fibre-loop memories is being experimented for solving routing contention of data cells in photonic high bit rate ATM switching fabrics.1 The simplest fiber-loop memory looks like a ring laser consisting of a semiconductor laser amplifier (SOA), a span of fibre introducing a delay of the order of an ATM cell duration (10–6-sec) and a 50/50 directional coupler (Fig. 1). To compensate for the power tapping at the directional coupler while avoiding the onset of laser oscillations, the SOA is biased above the ring laser threshold only for a limited number of round trips, then the bias current is switched off. The memory is thus driven through the transition from a state ruled by spontaneous emission toward a state above lasing threshold, in which stimulated emission is predominant. Far enough from the beginning of the transition the intensity fluctuations display a maximum.2,3 The transition is completed after a time depending on the final state intensity.2 These features significantly affect the maximum storage time and noise behavior of the memory.
The feasibility of constructing an all-optical dynamic memory based on stimulated Raman scattering (SRS) in a fibre waveguide is discussed. A possible use of an SRS inverter for regeneration of optical signals is considered. Theoretical and experimental investigations are reported of the functional properties of an SRS inverter. The construction and investigation of a prototype all-optical fibre memory with an SRS inverter are described. The repetition frequency of the optical pulses along a fibre loop is 100 MHz and the loop capacity is 500 bits. Pulse circulation is reported over a period of 10 min at an average pump power of 2 W. The response time and the energy requirements of devices with an SRS inverter, and ways of improving their characteristics are considered.