Strong Backscatterer at the Edge of a Two-dimensional Topological Insulator
Jun-Hui Zheng, Miguel A. Cazalilla
Abstract
We study the problem of a backcattering impurity coupled to the edge states of a two-dimensional topological insulator. In the regime where the backscattering potential is larger than the band gap and accounting for electron-electron interactions, it is s hown that the system can be described as a resonant level coupled to the one-dimensional (1D) channel of interacting edge electrons. We discuss the relationship of this system to the model of a (structureless) impurity in a 1D interacting electron liquid. Differently from the latter, transmission is suppressed for both repulsive and weak to moderate attractive interactions in the resonant regime.