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Physical Review Applied

Nonblinking Emitters with Nearly Lifetime-Limited Linewidths in CVD Nanodiamonds

Ke Li, Yu Zhou, Abdullah Rasmita, Igor Aharonovich, Weibo Gao

Published Aug 11, 2016• 61 citations
Publisher

Abstract

Much attention has been paid to the nitrogen-vacancy ($N\phantom{\rule{0}{0ex}}V$) center in diamond as a promising emitter for applications in quantum information science and photonics, but so far even the best quantum emitters in nanodiamonds have suffered from spectral diffusion and broad zero-phonon lines. The authors show that $s\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}l\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}c\phantom{\rule{0}{0ex}}o\phantom{\rule{0}{0ex}}n-v\phantom{\rule{0}{0ex}}a\phantom{\rule{0}{0ex}}c\phantom{\rule{0}{0ex}}a\phantom{\rule{0}{0ex}}n\phantom{\rule{0}{0ex}}c\phantom{\rule{0}{0ex}}y$ ($S\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}V$) defects in diamond exhibit a nearly lifetime-limited linewidth, do not suffer from blinking, and are optically stable even above saturation. These results point the way to progress in $e.g.$ hybrid quantum photonics and quantum sensing.

DOI
10.1103/physrevapplied.6.024010

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Much attention has been paid to the nitrogen-vacancy (N\phantom{\rule{0}{0ex}}V) center in diamond as a promising emitter for applications in quantum information science and photonics, but so far even the best quantum emitters in nanodiamonds have suffered from spectral diffusion and broad zero-phonon lines. The authors show that s\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}l\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}c\phantom{\rule{0}{0ex}}o\phantom{\rule{0}{0ex}}n-v\phantom{\rule{0}{0ex}}a\phantom{\rule{0}{0ex}}c\phantom{\rule{0}{0ex}}a\phantom{\rule{0}{0ex}}n\phantom{\rule{0}{0ex}}c\phantom{\rule{0}{0ex}}y (S\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}V) defects in diamond exhibit a nearly lifetime-limited linewidth, do not suffer from blinking, and are optically stable even above saturation. These results point the way to progress in e.g.e.g.e.g. hybrid quantum photonics and quantum sensing.
Near transform-limited single photon sources are required for perfect photon indistinguishability in quantum networks. Having such sources in nanodiamonds is particularly important since it can enable engineering hybrid quantum photonic systems. In this letter, we report the generation of optically stable, nearly transform-limited single silicon vacancy emitters in nanodiamonds. Lines as narrow as 325 MHz are reported, which is comparable to the lifetime limited linewidth. Moreover, the emitters exhibit minimal spectrum diffusion and absolute photostability, even if pumped well above saturation. Our results suggest that nanodiamonds can host color centers with supreme properties suitable for hybrid photonic devices and quantum information.
Defect centers in diamond are regarded as a promising candidate for future solid state quantum technology. In particular the nitrogen vacancy (NV) center attracts researchers attention, as it promises to emit indistinguishable single photons and provides a triplet ground state with ultra long spin coherence times. In particular NV centers in nano diamonds are attractive, since they can be integrated into quantum photonic hybrid devices with nano manipulation techniques. We report on first demonstrations of the integration of NV-centers into photonic hybrid devices, and point out future applications. Beside the striking demonstrations of the integrability, nanodiamonds have several drawbacks. In particular the spectral diffusion of the zero-phonon line is addressed.
Photoluminescence excitation spectroscopy of nitrogen vacancy (NV) centers in type Ib diamond nanocrystals shows that in spite of spectral diffusion and spin-nonconserving transitions, zero-phonon linewidth as small as 16MHz16\phantom{\rule{0.3em}{0ex}}\mathrm{MHz}16MHz, which is nearly lifetime limited, can be observed at low temperature. Relatively small effects of spectral diffusion have also been observed in a small fraction of NV centers.
Quantum photonics platforms hold considerable potential for the rapid development and deployment of quantum information and computing technologies. Color centers in diamond, such as silicon-vacancy (SiV) centers, have numerous attractive properties for such applications, including high brightness, narrow zero-phonon line (ZPL) linewidths at 737nm, and stable single-photon emission insusceptible to electric field fluctuations [1]. Color centers in photonic diamond nanostructures have been demonstrated recently [2], but their fabrication is challenging and requires sophisticated techniques and equipment.
Nitrogen-vacancy (NV) centers in single-crystal CVD diamond are promising candidates for quantum sensing due to their remarkable optical and spin properties [1]. These defects exhibit stable photoluminescence (PL), long spin coherence times, and high sensitivity to external fields [2]. In this study, we present a room-temperature PL characterization of NV centers excited with a 532 nm laser. The setup was optimized for high signal-to-noise ratio and spectral resolution. Key parameters analyzed include emission intensity, zero-phonon line (ZPL) at ~637 nm, phonon sidebands, and the charge state distribution between NV⁰ and NV⁻. The NV⁻ state, crucial for spin-based sensing, is evaluated to understand its stability under different nitrogen doping conditions [3]. The relative intensities of NV⁰ and NV⁻ provide insights into nitrogen incorporation and vacancy formation. These results contribute to optimizing synthesis conditions for enhanced NV⁻ concentration, supporting the advancement of diamond-based quantum sensing technologies.
The silicon-vacancy (SiV) color center in diamond is a solid-state single photon emitter and spin quantum bit suited as a component in quantum devices. Here, we show that SiV centers in nanodiamonds exhibit a strongly inhomogeneous distribution with regard to the center wavelengths and linewidths of the zero-phonon-line (ZPL) emission at room temperature. We find that the SiV centers separate in two clusters: one group exhibits ZPLs with center wavelengths within a narrow range ≈730–742 nm and broad linewidths between 5 and 17 nm, whereas the second group comprises a very broad distribution of center wavelengths between 715 and 835 nm, but narrow linewidths from below 1 up to 4 nm. Supported by ab initio Kohn–Sham density functional theory calculations we show that the ZPL shifts of the first group are consistently explained by strain in the diamond lattice. Further, we suggest, that the second group showing the strongly inhomogeneous distribution of center wavelengths might be comprised of a new class of silicon-related defects. Whereas single photon emission is demonstrated for defect centers of both clusters, we show that emitters from different clusters show different spectroscopic features such as variations of the phonon sideband spectra and different blinking dynamics.