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Springer series in solid-state sciences

One- and Two-Particle Excitations in Doped Mott-Hubbard Insulators

Peter Horsch, W. Stephan

Published Jan 1, 1993• 1 citation
Publisher
DOI
10.1007/978-3-642-84865-0_62

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An intuitive interpretation of the relationship between the dispersion relation of the single-particle excitation in a metal and that of the spin excitation in a Mott insulator is presented, based on the results for the one- and two-dimensional Hubbard models obtained by using the Bethe ansatz, dynamical density-matrix renormalization group method, and cluster perturbation theory. The dispersion relation of the spin excitation in the Mott insulator is naturally constructed from that of the single-particle excitation in the zero-doping limit in both one- and two-dimensional Hubbard models, which allows us to interpret the doping-induced states as the states that lose charge character toward the Mott transition. The characteristic feature of the Mott transition is contrasted with the feature of a Fermi liquid and that of the transition between a band insulator and a metal.
Recent angle-resolved photoemission spectroscopy (ARPES) for a newly discovered doped one-dimensional (1D) Mott insulator ${\mathrm{Ba}}_{2\ensuremath{-}x}{\mathrm{Sr}}_{x}{\mathrm{CuO}}_{3+\ensuremath{\delta}}$ proposed the presence of attractive charge interactions between neighboring sites if a 1D Hubbard model is employed to describe the material. On the other hand, long-range repulsive charge interactions were proposed to be crucial for understanding the optical excitations of undoped 1D Mott insulators. Motivated by these contrasting proposals, we perform density-matrix renormalization group calculations of the single-particle spectral function as well as dynamical spin and charge structure factors for two kinds of extended 1D Hubbard models. The spectral function for the long-range repulsive model less agrees with the ARPES data as compared with that for the attractive one. The dynamical spin and charge structure factors also exhibit contrasting behaviors between the two models: The attractive model shows less momentum dependence of the integrated weight in the dynamical spin structure factor and more accumulation of the weight on the upper edge of particle-hole-type excitation in the dynamical charge structure factor. These features give a good criterion of an appropriate model for doped 1D Mott insulators, which can be judged by resonant-inelastic x-ray scattering experiments.