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Springer series in chemical physics

Influence of Inhomogeneous Broadening on Quantum Beats

John Erland, K.‐H. Pantke, Vygantas Mizeikis, Vadim G. Lyssenko, J. M. Hvam

Published Jan 1, 1994• 0 citations
Publisher
DOI
10.1007/978-3-642-85176-6_136

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Abstract The influence of inhomogeneous broadening on results obtained from spectrally resolved transient four‐wave mixing in semiconductors is studied and the homogeneous and inhomogeneous linewidths are simultaneously deduced. Experimental results obtained from the impuritybound exciton I1 in CdSe and the heavy‐hole and light‐hole excitons in GaAs multiple quantum well structures are presented. Furthermore, the case is investigated when more resonances are coherently excited leading to quantum beats.
We investigate the four-wave mixing response of semiconductor quantum wells having a predominantly inhomogeneous broadening of the exciton states. The influence of the biexcitons on the nonlinear emission, in proximity to the lowest exciton resonance, is studied. Using about 1 ps long pulses, we show that biexcitons are created for all excitation energies lying within the broadened exciton absorption line, and that their binding energy does not depend on the exciton energy. Reducing the temporal width of cross-linearly polarized incident laser fields to about 0.1 ps, we observe a drastic changeover from a prompt response to a photon echo, and quite interesting beating phenomena, visible in time-integrated as well as in time-resolved experiments, appear. Our observations compare well with the numerical solutions of the optical Bloch equations for a five-level scheme. The influence of the inhomogeneous broadening on the beating phenomena is discussed.