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Physical review. B./Physical review. B

Temperature dependency of resonance fluorescence from InAs/GaAs quantum dots: Dephasing mechanisms

Joanna M. Zajac, Sigurður I. Erlingsson

Published Jul 20, 2016• 5 citations
Publisher

Abstract

We report a study on temperature-dependent resonant fluorescence from InAs/GaAs quantum dots. We combined spectral and temporal measurements in order to identify sources of dephasing. In the spectral domain, we observed temperature-dependent broadening of the zero-phonon line as $0.3\phantom{\rule{0.28em}{0ex}}\ensuremath{\mu}\mathrm{eV}/\mathrm{K}$, and a temperature-dependent phonon broadband. Time-resolved autocorrelation measurements revealed temperature-dependent spin pumping times between ${T}_{1,s}=6$ ns (4 K) and $0.5$ ns (15 K). These results are compared against theoretical modeling with a master equation for a four-level system coupled to phonon and spin baths. We explained the results by phonon-mediated hole-spin scattering between two excited states, with the piezophonons as a dominant mechanism.

DOI
10.1103/physrevb.94.035432

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We report a study on temperature-dependent resonant fluorescence from InAs/GaAs quantum dots. We combined spectral and temporal measurements in order to identify sources of dephasing. In the spectral domain, we observed temperature-dependent broadening of the zero-phonon line as 0.3\ensuremathμeV/K0.3\phantom{\rule{0.28em}{0ex}}\ensuremath{\mu}\mathrm{eV}/\mathrm{K}0.3\ensuremathμeV/K, and a temperature-dependent phonon broadband. Time-resolved autocorrelation measurements revealed temperature-dependent spin pumping times between T1,s=6{T}_{1,s}=6T1,s​=6 ns (4 K) and 0.50.50.5 ns (15 K). These results are compared against theoretical modeling with a master equation for a four-level system coupled to phonon and spin baths. We explained the results by phonon-mediated hole-spin scattering between two excited states, with the piezophonons as a dominant mechanism.
We have performed time-integrated degenerate four-wave mixing experiments in InAs/GaAs self-assembled quantum dots. The quantum dots are excited in resonance with an intersublevel transition between the valence states of the dots. The dephasing time T2{T}_{2}T2​ is deduced from the time dependence of the photon echo amplitude as a function of the delay between the two incident pulses. At low temperature, a dephasing time T2{T}_{2}T2​ of 15 ps is measured for a resonant excitation at 7.4 \ensuremath{\mu}m wavelength. This dephasing corresponds to an homogeneous broadening of the intersublevel transition of 87 \ensuremath{\mu}eV. The polarization decay time is much longer than the one observed for resonant intersubband excitations in quantum wells. The dephasing time of the intersublevel polarization exhibits only a weak temperature dependence, indicating that the dephasing is not dominated by phonon-assisted scattering mechanisms.
We present temperature-dependent measurements of the dephasing time in the ground-state transition of strongly-confined InGaAs quantum dots, using a highly sensitive four-wave mixing technique. At low temperature we measure a dephasing time of several hundred picoseconds. Between 7 and 100 K the polarization decay has two distinct components resulting in a non-Lorentzian lineshape with a sharp zero-phonon line and a broad band from elastic exciton-acoustic phonon interactions. We also explore the dephasing time beyond the one exciton occupation, by electrically injecting carriers. Electrical injection into the barrier region results in a dominantly pure dephasing of the excitonic ground-state transition. Once the injected carriers have filled the electronic ground state, additional filling of the excited states creates multiexcitons that show a fast dephasing due to population relaxation.
We investigate the temperature dependence of photon coherence properties through two-photon interference (TPI) measurements from a single quantum dot (QD) under resonant excitation. We show that the loss of indistinguishability is related only to the electron-phonon coupling and is not affected by spectral diffusion. Through these measurements and a complementary microscopic theory, we identify two independent separate decoherence processes, both of which are associated with phonons. Below 10 K, we find that the relaxation of the vibrational lattice is the dominant contribution to the loss of TPI visibility. This process is non-Markovian in nature and corresponds to real phonon transitions resulting in a broad phonon sideband in the QD emission spectra. Above 10 K, virtual phonon transitions to higher lying excited states in the QD become the dominant dephasing mechanism, this leads to a broadening of the zero phonon line, and a corresponding rapid decay in the visibility. The microscopic theory we develop provides analytic expressions for the dephasing rates for both virtual phonon scattering and non-Markovian lattice relaxation.
We investigate a quantum dot (QD) system coupled to a vibrational environment with a super-Ohmic spectral density and weakly to a leaky cavity mode, a model relevant for semiconductor-based single-photon sources. The phonon coupling induces dephasing and broadens the absorption and emission line shapes, while the weakly coupled cavity mode leads to effective driving of the QD. To capture non-Markovian effects, we use non-Markovian Quantum State Diffusion and its hierarchical extension the Hierarchy of Pure States to compute multitime correlation functions underlying absorption and resonance fluorescence spectra. We present numerical results for the absorption spectra at strong phonon coupling and finite temperature, as well as for resonance fluorescence spectra at varying phonon coupling strengths and temperatures, and analyse the visibility of the resonance fluorescence spectra to provide insights into how phonon coupling and thermal effects influence the spectral features.
We report on four-wave-mixing experiments in self-assembled InAs/GaAs quantum dots and compare with a theory that accounts for the pure-dephasing induced by acoustic phonons. The measurements demonstrate an unusual non-monotonous temperature dependence of the initial decoherence time in full agreement with previous theoretical predictions made on the basis of a model that concentrates on the lowest electronic states. For samples exhibiting strong electronic confinement this model even yields a good quantitative agreement with the experiments while for less confined samples there are some systematic deviations although many qualitative features are still well reproduced by the model. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)