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International Conference on Solid State Devices and Materials (SSDM)

Excitation and Relaxation of Yb 4f-Shell in InP Host--Energy Compensation by a Multi-Phonon Process

Akihito Taguchi, Kenichiro Takahei

Published Aug 24, 1994• 0 citations
Publisher
DOI
10.7567/ssdm.1994.s-i-9-3

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The photoluminescence spectra of Yb-implanted InP samples were studied under pulsed and cw excitations using an Ar+-ion laser (above band-gap excitation) at different temperatures and excitation intensities. The photoluminescence spectrum of the 4f transitions 2F5/2–2F7/2 consists of a sharp peak at 1001 nm and broader peaks in the spectral range between 1002.5 and 1010 nm. Time-resolved spectra were recorded at different temperatures. Using a tunable Ti:sapphire laser (above and below band-gap excitation) the photoluminescence excitation spectra were investigated for different emission lines. Study of the rise and decay time under intrinsic excitation (band to band) show that the rise time is a function of excitation intensity, which reflects an indirect excitation process for Yb3+. The experimental data are explained using a kinetics model of energy transfer from the host lattice to the localized core excited states of rare-earth isoelectronic structured traps. The numerically simulated luminescence rise and decay times show a good general quantitative agreement with experimental data, over a wide range of generation rates. The photoluminescence spectra and decay time were also studied as a function of temperature. A quenching mechanism of ytterbium luminescence involving Yb and Fe ions is proposed. Finally, the electric-field quenching of InP:Yb photoluminescence is investigated.
A new, very efficient excitation mechanism of Yb intrashell 4f-4f emission in ZnS is reported. We show that the energy transfer from donor-acceptor pairs to Yb sites leads to Yb ionization (Yb3+⇒Yb2+), followed by capture of ionized carriers via the Yb3+ external excited state (bound exciton state), an energy transfer to the Yb3+ 4f shell, and Yb3+ 4f-4f radiative recombination. Since three centers (donor, acceptor, and Yb) participate in the energy transfer process in which Yb is first ionized, the above excitation mechanism is of three-center Auger transition nature. A similar excitation mechanism is expected for Eu, Sm, and Tm in ZnS, i.e., for these rare earth (RE) ions which can change their charge state from 3+ to 2+ in this lattice. For wider band-gap sulfides, such as CaS or SrS, this mechanism can be of importance also for other REs, such as, for example, Pr, Dy, and Er.