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Conference on Lasers and Electro-Optics

Absorptive optical bistability and switching in MQW etalons with optical halfwave periodicity

Donald L. McDaniel, John Gerard McInerney

Published May 10, 1992• 0 citations
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Epitaxial methods allow the fabrication of nonlinear interferomethc structures which include the mirrors and the GaAs Multiple Quantum Wells (MQW) nonlinear medium in a single crystal. This results in very compact nonlinear microcavities with typically 5im overall thickness. Optical bistability is observed in these structures at mW optical power. We review our latest experimental results on these structures including the observation of high contrast switching in the reflection mode the direct measurement of dispersive optical nonlinearities in MQWs evidencing their saturation behavior at high intensities. Finally we report external-beam switching experiments which allow to assess the potential of these structures as all-optical gates.
In this work we have studied the dynamics of switch-on and switch-off processes in biased MQW structures where every well shows optical bistability in a light intensity range (l, h). We have analysed in detail MQW structures with negligible inter-well transport. We have found that the switch-on mechanism consists of a time sequence where every QW jumps into the high-absorption state. Therefore a step-like switching wave propagates through the structure. The switch-off process resembles a reverse wave propagating in the opposite direction and step-like processes in the plasma concentration decay. These effects can be used for conversion of an analogue optical signal to digital (optical and electrical) signal(s).