Transverse effects in increasing absorption optical bistability
Brian P. McGinnis, Ewan M. Wright, S. W. Koch, Nasser N. Peyghambarian
Abstract
Theoretical modeling of increasing absorption optical bistability in thin semiconductors has predicted the appearance of transverse spatial rings in the transmitted intensity profiles of an incident Gaussian laser beam.1 The formation of this ring is due to nonuniform switching of the semiconductor in response to the varying beam profile.