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International Conference on Solid State Devices and Materials (SSDM)

Fabrication and Characterization of a Phase Controlled SNS Quantum Electron Interferometer

Victor T. Petrashov, VI. N. Antonov, Per Delsing, T. Claeson

Published Aug 22, 1995• 0 citations
Publisher
DOI
10.7567/ssdm.1995.d-1-6

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We propose and demonstrate a modular architecture for reconfigurable on-chip linear-optical circuits. Each module contains 10 independent phase-controlled Mach-Zehnder interferometers; several such modules can be connected to each other to build large reconfigurable interferometers. With this architecture, large interferometers are easier to build and characterize than with traditional, bespoke, monolithic designs. We demonstrate our approach by fabricating three modules in the form of UV-written silica-on-silicon chips. We characterize these chips, connect them to each other, and implement a wide range of linear optical transformations. We envisage that this architecture will enable many future experiments in quantum optics.
Superconductor-normal-superconductor (SNS) weak links using a semiconductor as the normal region are of interest for applications in high frequency Josephson devices and in superconducting field effect transistors. Recently, there has been a revival of interest in materials such as InAs which, in principle, allow true SNS structures without tunneling (Schottky) barriers at the electrodes, In this paper we discuss the requirements for semiconductor SNS Josephson and FET devices and describe the fabrication and characterization of planar SNS weak links in which the normal region is InAs, which is part of a heterostructure consisting of a thin (100 nm) layer of n-InAs grown on undoped GaAs. Nb electrodes defined by electron beam lithography have been made with spacings as small as 260 nm. Preliminary measurements indicate that the devices have good electrical behavior which is well explained by SNS weak link theory, using coherence lengths calculated from measured material parameters. These weak links can be the basis for superconducting FET devices, and have the significant advantage of allowing simple device isolation compared with bulk InAs, which was used in earlier work.
We demonstrate a direct writing method for the fabrication of planar Josephson junctions from high-quality superconducting niobium titanium nitride (NbTiN) thin films, by creating local disorder using focused He ion beam irradiation. We control the suppression of superconductivity in NbTiN as a function of the helium ion beam fluence, enabling us to successfully fabricate Josephson junctions with highly tunable weak links ranging from the metallic to the insulating phase, utilizing the continuous nature of the disorder-induced superconductor-insulator transition. We demonstrate the successful fabrication of both superconductor-normal metal-superconductor (SNS) and superconductor-insulator-superconductor (SIS) type of devices, and show that we can achieve an exceptionally wide range ( ∼ 5 orders of magnitude) of critical current densities and junction resistances. The SNS-type junctions follow closely the ideal resistively and capacitively shunted junction behavior, have high characteristic voltages up to ∼ 1.5 mV , and show Shapiro steps up to very high orders, while the SIS junctions also follow established theories well. The results suggest that the junctions are suitable for a wide range of applications in superconducting electronics because of the excellent mechanical, electrical, and microwave properties of NbTiN. In particular, as NbTiN has previously been used to fabricate high-quality factor microwave resonators, we see the method as a promising and simple way to realize high-frequency superconducting qubits and other quantum devices using only a single superconducting film.