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Optics Letters

Tunneling-induced giant Goos–Hänchen shift in quantum wells

Wen‐Xing Yang, Shaopeng Liu, Zhonghu Zhu, Ziauddin Ziauddin, Ray‐Kuang Lee

Published Jun 24, 2015• 63 citations
Publisher

Abstract

Tunneling-induced quantum interference experienced by an incident probe in the asymmetric double AlGaAs/GaAs quantum well (QW) structure can be modulated by means of an external control light beam and the tunable coupling strengths of resonant tunneling. These phenomena can be exploited to devise a novel intracavity medium to control Goos-Hänchen (GH) shifts of a mid-infrared probe beam incident on a cavity. For a suitably designed QW structure, our results show that maximum negative shift of 2.62 mm and positive shift of 0.56 mm are achievable for GH shifts in the reflected and transmitted light.

DOI
10.1364/ol.40.003133

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Laser Physics•Jul 27, 2017•2 citations
Tunneling-induced quantum interference experienced by an incident probe in the asymmetric double AlGaAs/GaAs quantum well (QW) structure can be modulated by means of an external control light beam and the tunable coupling strengths of resonant tunneling. These phenomena can be exploited to devise a novel intracavity medium to control Goos-Hänchen (GH) shifts of a mid-infrared probe beam incident on a cavity. For a suitably designed QW structure, our results show that maximum negative shift of 2.62 mm and positive shift of 0.56 mm are achievable for GH shifts in the reflected and transmitted light.
A scheme of enhanced Goos-Hänchen (GH) shifts in reflected and transmitted light beams is exploited in a cavity, where an asymmetric double AlGaAs/GaAs quantum well structure with resonant tunneling to a common continuum is employed as the intracavity medium. With the help of Fano-type interference induced by resonant tunneling, the generated GH shifts that contain a negative lateral shift in reflected light beam and a positive lateral shift in transmitted light beam are found to be significantly enhanced. More interestingly, these GH shifts in reflected and transmitted light beams are modulated by means of a control beam and external bias voltage, in which maximum negative shift of 1.86 mm and positive shift of 0.37 mm are achievable.
Abstract In this letter, we propose a novel model for adjusting the Goos–Hänchen shifts (GH) from a fixed cavity. A three-level double quantum dot (QD) molecule is doped in the cavity, which interacts with a probe laser field and an incoherent pumping rate. We initially investigate the refraction index of double QDs utilizing the quantum mechanical density matrix approach in order to achieve negative and positive refractive indexes. The GH shifts of reflected and transmitted light beams in positive and negative refraction indices of the intracavity medium were then studied. The improved negative or positive GH shifts in reflected and transmitted light beams may be accomplished by changing the incoherent pumping rate and tunneling effect. Our findings reveal that the magnitude of the GH shifts is greatly influenced by the absorption of incoming probing light in double QDs. The enormous GH shifts for the perfect tuning cavity have been seen at a given incidence angle.
Controlling of the Goos-Hänchen (GH) shifts of the reflected and transmitted probe pulses through a cavity containing four-level GaAs/AlGaAs quantum dot with 15 periods of 17.5 nm GaAs wells and 25-nm Al 0.3 Ga 0.7 As barriers is investigated. Under appropriate conditions, the probe absorption can be converted to the probe gain, therefore, the controlling of negative and positive GH shift in the both reflected and transmitted probe beams can be occurred simultaneously. Our obtained results show that the group index of the probe beams could be negative or positive in both reflected and transmitted pulses. Therefore, simultaneous subluminal or superluminal light propagation in reflected and transmitted pulses can be achieved.
Goos–Hänchen (GH) shifts in the reflected and transmitted light are investigated for p-polarized partially coherent light beams incident on a cavity having a quantum dot (QD) system as the intracavity medium. The coherent coupling between the two quantum dots via a tunneling field leads to tunneling-induced transparency and giant Kerr nonlinearity with vanishing absorption. The Kerr nonlinearity of the double QD system thus increases the amplitude of GH shifts in the reflected and transmitted light. The influence of the spatial coherence and the beam width of the partially coherent light fields on GH shifts in the reflected and transmitted light are also investigated, and large GH shifts are reported for the small range of the spatial coherence and the beam width of the partially coherent light field.
We study the controlling of the Goos-Hänchen (GH) shifts in reflected and transmitted light beams in the triple coupled InGaAs/GaAs quantum dot (QD) nanostructures with electron tunneling and incoherent pumping field. It is shown that the lateral shift can become either large negative or large positive, which can be controlled by the electron tunneling and the rate of incoherent pump field in different incident angles. It is also demonstrated that the properties of the GH shifts are strongly dependent on the probe absorption beam of the intracavity medium due to the switching from superluminal light propagation to subluminal behavior or vice versa. Our suggested system can be considered as a new theoretical method for developing a new nano-optoelectronic sensor.
Abstract The Goos–Hänchen (GH) shifts due to a negative refractive index in double quantum-dot nanostructures are discussed in reflected and transmitted light beams. It is realized that positive and negative GH shifts can be attained in the negative-refraction medium due to the presence of the indirect incoherent pumping field and electron tunneling. We found that the lateral shift at the fixed incident angle can be enhanced (positive or negative) under suitable conditions on the control field, without changing the structure of the cavity. We hope that our proposed configuration may be helpful for future all-optical sensor devices based on quantum-dot nanostructures.