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Applied Optics

Self-amplification of supercritical angle fluorescence using multiple emitters at a dielectric–dielectric interface

Randhir Kumar, Sushil A. Mujumdar

Published Sep 15, 2015• 1 citation
Publisher

Abstract

Super-critical angle fluorescence (SAF) generated from an ensemble of emitters overlying a high-contrast dielectric-dielectric interface is discussed. At increased excitation, signatures of self-amplification of the SAF were observed, which differed from the emission properties of normal fluorescence generated within the critical angle. Contrasting behavior was observed between the SAF and normal fluorescence with respect to bandwidth narrowing for varying gain lengths. Power-law variation was recovered for the peak intensity as a function of excitation energy. Upon disturbance of pristine conditions of the interface, the signatures of the self-amplified SAF were lost.

DOI
10.1364/ao.54.008170

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Super-critical angle fluorescence (SAF) generated from an ensemble of emitters overlying a high-contrast dielectric-dielectric interface is discussed. At increased excitation, signatures of self-amplification of the SAF were observed, which differed from the emission properties of normal fluorescence generated within the critical angle. Contrasting behavior was observed between the SAF and normal fluorescence with respect to bandwidth narrowing for varying gain lengths. Power-law variation was recovered for the peak intensity as a function of excitation energy. Upon disturbance of pristine conditions of the interface, the signatures of the self-amplified SAF were lost.
We have demonstrated amplified spontaneous emission (ASE) propagating along the planar interface between two adjacent dielectrics with slightly different refractive indexes. This emission originates from the leaky mode, fueled by optical gain in the low-index dielectric, that is outcoupled to the high-index dielectric in vicinity of the critical angle for total internal reflection. This led us to the observation of spectacular concentric rings of ASE emission occurring above the low and soft stimulated emission threshold. The results of our study can be used to develop novel miniature low-threshold stimulated emission sources and photonic circuits operating at optical frequencies.
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The spontaneous-emission rates of emitters embedded in a thin layer 0 of a loss-free dielectric depend on their optical environment, i.e., on the optical properties of the two media 1 and 2 adjoining layer 0. For electric- and magnetic-dipole transitions the spontaneous-emission rates, normalized with respect to those in an infinite medium 0, are expressed in terms of the Fresnel reflection coefficients for plane and evanescent waves incident from medium 0 on the interfaces to the planar-stratified or homogeneous media 1 and 2, respectively. From this result which is valid for arbitrary layer thicknesses d0{d}_{0}d0​ we derive an approximation for extremely thin layers of optical thickness ${n}_{0}{d}_{0}\ensuremath{\ll}\frac{\ensuremath{\lambda}}{8}$ (where $\ensuremath{\lambda}$ is the emission wavelength) between two homogeneous loss-free dielectric media 1 and 2. For the normalized spontaneous-emission rates as functions of the refractive indices nj{n}_{j}nj​ of media j=0,1,and2j=0, 1, \mathrm{and} 2j=0,1,and2 analytical expressions are obtained. We have used these expressions previously without proof [Phys. Rev. B 21, 4814 (1980)] to analyze experimentally observed changes in the fluorescence lifetime of Eu3+{\mathrm{Eu}}^{3+}Eu3+ ions in varying optical environments, which yielded the quantum efficiency of the emitting state.
We investigate the reflection of plane waves of s and p polarization from the interface between a homogeneous transparent medium and an amplifying medium with a gain profile decreasing exponentially with depth of penetration. For angles of incidence less than critical angle, the reflectance curves are essentially the same as those deduced from the usual Fresnel formulas for two transparent media. In the vicinity of critical angle, the reflection coefficients are virtually the same for both polarizations and are greater than unity. Beyond critical angle, the reflectances fall toward unity as grazing incidence is approached. Both the reflectance and the far-field transmittance peak in the immediate vicinity of critical angle. For angles less than critical angle, the transmittance can be 2 orders of magnitude greater than the reflectance. Certain values of gain parameters and incident angle lead to singularities in the theoretical reflectance. At these points the usual neglect of the effect of the transmitted wave on the population inversion is no longer valid.
Enhancement of the diffusive albedo from a random amplifying medium is discussed. A pump-probe setup is used to study the amplification of the reflected probe pulse light outside the backscattering cone. Strong super-reflection is measured and its dependence on the disorder strength is studied. An optimal disorder strength is observed at high excitation energy wherein the super-reflection is maximal. The origins of this behavior are traced to the interplay between the out-coupling and amplification from a disordered amplifying medium with an inhomogeneous distribution of gain.