The subharmonic gap structure (SGS) in long-overlap Nb-AlOx-Nb Josephson tunnel junctions has been investigated. The experimental results show peaks in the differential conductance at both odd and even integer fractions of the gap voltage, VG. Furthermore, the conductance peaks at VG/2 has been observed to split into two peaks with different characteristics. At high magnetic fields, the I-V characteristics approach a single curve, while retaining the SGS conductance peaks. The gap structure and the SGS show the same temperature dependence. The SGS can be explained by a Josephson self-coupling effect or multiple Andreev reflections. The results are important for the development of the flux flow oscillator used a local oscillator in integrated all-superconducting 200-800 GHz receivers.
Abstract Superconducting integrated circuits have demonstrated a tremendous potential to realize integrated quantum computing processors. However, the downside of the solid-state approach is that superconducting qubits suffer strongly from energy dissipation and environmental fluctuations caused by atomic-scale defects in device materials. Further progress towards upscaled quantum processors will require improvements in device fabrication techniques, which need to be guided by novel analysis methods to understand and prevent mechanisms of defect formation. Here, we present a technique to analyse individual defects in superconducting qubits by tuning them with applied electric fields. This provides a spectroscopy method to extract the defects’ energy distribution, electric dipole moments, and coherence times. Moreover, it enables one to distinguish defects residing in Josephson junction tunnel barriers from those at circuit interfaces. We find that defects at circuit interfaces are responsible for about 60% of the dielectric loss in the investigated transmon qubit sample. About 40% of all detected defects are contained in the tunnel barriers of the large-area parasitic Josephson junctions that occur collaterally in shadow evaporation, and only
≈ ≈ 3% are identified as strongly coupled defects, which presumably reside in the small-area qubit tunnel junctions. The demonstrated technique provides a valuable tool to assess the decoherence sources related to circuit interfaces and to tunnel junctions that is readily applicable to standard qubit samples.
Measurements are reported of the single-particle characteristics of Nb-Al oxide-Nb superconducting tunnel junctions. Subgap leakage, subharmonic gap structure, and excess current are observed to increase systematically with increasing Josephson critical current density above a few kA/cm2. These phenomena are attributed to multiple Andreev reflections in high transmittance regions of the barrier. Such effects may significantly impact the applications of high critical current density junctions in advanced circuits.