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Acta Sinica Quantum Optica

Semiconductor Tapered-amplified Laser(TPA) Set for Rb Cooling System

Hai Wang

Published Jan 1, 2009• 1 citation
OpenAlex

Abstract

In this paper,we report an optical power amplifier operating at 780 nm.The optical power amplifier is a semiconductor tapered amplifier(Eagleyard,EYP-TPA-0780-01000);the output power from the optical power amplifier is up to about 600 mW when a seeding laser beam with a power of 25 mW is injected into the amplifier.After beam shaping by lens,frequency shifting by an acousto-optical modulator(AOM) and spatial filtering by a single-mode fiber,the output power is up to 110 mW.The presented optical power amplifier may be applied into the MOT for achieving a larger number of trapped atoms.

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The number density of cold atoms confined in a magneto-optical trap (MOT) is critically dependent on the intensity of the lasers used to cool the sample. To generate large optical powers while retaining the practicality of homemade external cavity diode lasers (ECDLs), a tapered amplifier (TA) system was designed and constructed to amplify the output of an existing 780 nm, continuous-wave ECDL. The amplifier’s performance is discussed in terms of its gain and power output. Under standard operating conditions, optical amplification of 12 dB is achieved, with a maximum power output of 0.75 W. The completed amplifier is installed into an existing MOT at Colby College, and its effect is analyzed in terms of the number density of trapped samples of rubidium-85. MOT measurements are given demonstrating an increase in these number densities by a factor of ten. We conclude with initial results to quantify the amplifier’s effect on the dynamics of ultra-cold plasmas created from the trapped atom samples.

•Jan 1, 2015•0 citations
In this paper,we report an optical power amplifier operating at 780 nm.The optical power amplifier is a semiconductor tapered amplifier(Eagleyard,EYP-TPA-0780-01000);the output power from the optical power amplifier is up to about 600 mW when a seeding laser beam with a power of 25 mW is injected into the amplifier.After beam shaping by lens,frequency shifting by an acousto-optical modulator(AOM) and spatial filtering by a single-mode fiber,the output power is up to 110 mW.The presented optical power amplifier may be applied into the MOT for achieving a larger number of trapped atoms.
We present plans for the construction and operation of a tapered optical amplifier (TA) system seeded by a single-mode, frequency-tunable, near-IR external-cavity diode laser. Our plans include machine drawings for the parts, electronic circuit diagrams, and information on prices and vendors. Instructions are provided on how to safely couple light into and out of the TA chip. Practical aspects of handling the chip are discussed as well. Because many cold atom experiments require light beams with Gaussian spatial profiles, measurements of the tapered amplifier light output through a single-mode optical fiber are presented as a function of seed intensity, polarization, and driving current.
We present a laser configuration capable of fast frequency changes with a high power output and a large tuning range. The system integrates frequency tuning with an acousto-optic modulator with a double pass tapered amplifier. A compensation circuit keeps the seed power constant and prevents damage to the amplifier. A single mode fiber decouples the modulation and amplification sections and keeps the alignment fixed. The small power required to saturate the amplifier makes the system very reliable. We use the system to obtain a dipole trap that we image using a beam derived from the same configuration.
We present a novel design of a compact, stable, and easy-adjustable semiconductor optical amplifier (SOA) system.This SOA system is capable of providing up to 560-mW laser power at the wavelength of 852 nm.For the continuous-wave (CW) seeding laser, the amplification gain can reach 18 dB.We add amplitude modulation onto the CW laser and measure the modulation amplification between seeding and output laser.The amplification gain remains constant within the frequency range from 10 Hz to 1 MHz.The whole system could work in ultra-stable condition: for CW seeding laser, the fluctuation of output power is less than 0.33% in several hours.
We have developed a semiconductor laser system used in 40K-87Rb trapping and cooling experiment. The laser diode system is composed of three external cavity diode lasers and four injection diode lasers and a tapered amplifier. Four laser beams used for 40K and 87Rb cooling and repump lights are obtained by using acoustic optic modulators to offset the frequencies from the three external cavity diode lasers. Four light beams with different frequencies are injected into four slave lasers for injection locking. Then Rb cooling light, K cooling light and K repump light are injected into a semiconductor tapered amplifier in a master oscillator-power configuration. This configuration is flexible and stable and can simultaneously produce the cooling and repump light for 40K and 87Rb trapping and cooling experiment.
Precise control of atomic systems has led to an array of emerging 'quantum' sensor concepts ranging from Rydberg-atom RF-electric probes to cold-atom interferometer gravimeters. Looking forward, the potential impact of these technologies hinges on their capability to be adapted from laboratory-scale experiments to compact and low-power field-deployable instruments. However, existing setups typically require a bulky and power-hungry laser and optics system (LOS) to prepare, control, and interrogate the relevant atomic system using a variety of frequency-referenced and rapidly reconfigurable laser beams. In this work, we investigate the feasibility of using semiconductor optical amplifiers (SOAs) to replace high-power pump lasers and acousto-optic modulators within a simple atom cooling apparatus, looking forward to the ultimate goal of a space-deployable atom interferometer. We find that existing off-the-shelf SOA components operating at relevant wavelengths for Cs and Rb atom cooling (852 and 780 nm, respectively) are able to permit an attractive combination of rapid (sub-microsecond), high extinction ratio (>60-65 dB) switching while acting as power boosters prior to the atom physics package. These attributes enable a radically different, power-efficient approach to LOS design, reducing or eliminating the need for Watt-class laser amplifiers that are unsuitable for flight deployment. Building on these results, we construct a simple and compact all-semiconductor laser/amplifier LOS for atom cooling that is integrated with custom path-to-flight drive electronics. Up to 125 mW of total optical power is delivered to six fiber-coupled channels for magneto-optical-trap-based cooling of a cloud of neutral Cs atoms. The entire LOS, including reference and cooling laser subsystems and control electronics, occupies a volume of 20×20×15 cm and totals DC power consumption of around 13.5 W, and is designed in a modular format so that additional hardware for synthesizing atom interferometry beams may be added through future development efforts. These results indicate the utility of all-semiconductor laser systems for future low-power flyable atom-based sensor instruments.
The number density of cold atoms confined in a magneto-optical trap (MOT) is critically dependent on the intensity of the lasers used to cool the sample. To generate large optical powers while retaining the practicality of homemade external cavity diode lasers (ECDLs), a tapered amplifier (TA) system was designed and constructed to amplify the output of an existing 780 nm, continuous-wave ECDL. The amplifier’s performance is discussed in terms of its gain and power output. Under standard operating conditions, optical amplification of 12 dB is achieved, with a maximum power output of 0.75 W. The completed amplifier is installed into an existing MOT at Colby College, and its effect is analyzed in terms of the number density of trapped samples of rubidium-85. MOT measurements are given demonstrating an increase in these number densities by a factor of ten. We conclude with initial results to quantify the amplifier’s effect on the dynamics of ultra-cold plasmas created from the trapped atom samples.