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Photovoltaic effect in a photon storage cell

Bian Sb, Li Gr, Yan Jun Tang, Huo Bing, YX Li, Fuhua Yang, Zheng Hz

Published Jan 1, 2004• 0 citations
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Abstract

The response of photonic memory effect in I-V characteristics of a specially designed photonic memory cell was reported. When the cell is biased in a storage mode, the optical excitation with the photon's energy larger than the energy gap gives rise to a step-like jump in the current. A set-up was used to measure the transient photocurrent at the biases where the step-like jump showed up. It is proved that the falling transient edge of the photocurrent, as the photoexcitation turns off, mainly maps the decaying of electrons and holes, which were previously stored in the cell during the illumination. Its time constant is a measure of photonic memory time.

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The response of photonic memory effect in I-V characteristics of a specially designed photonic memory cell was reported. When the cell is biased in a storage mode, the optical excitation with the photon's energy larger than the energy gap gives rise to a step-like jump in the current. A set-up was used to measure the transient photocurrent at the biases where the step-like jump showed up. It is proved that the falling transient edge of the photocurrent, as the photoexcitation turns off, mainly maps the decaying of electrons and holes, which were previously stored in the cell during the illumination. Its time constant is a measure of photonic memory time.
The response of photonic memory effect in Ⅰ-Ⅴ characteristics of a specially designed photonic memory cell was reported. When the cell is biased in a storage mode, the optical excitation with the photon’s energy larger than the energy gap gives rise to a step-like jump in the current. A set-up was used to measure the transient photocurrent at the biases where the step-like jump showed up. It is proved that the falling transient edge of the photocurrent, as the photoexcitation turns off, mainly maps the decaying of electrons and holes, which were previously stored in the cell during the illumination. Its time constant is a measure of photonic memory time.
The physical model was founded by Crosslight Apsys software for new type of photonic memory cell based on a quantum dot (QD)-quantum well (QW) hybrid structure. The physical mechanisms involved such as interband optical transition of quantum dots. The scan conditions and iterative algorithm was also set up to finish solving. Photon storage process has well proved based on I-V curve and transient time response obtained from the model. These are crucial in the signal readout-circuit design afterward.
Photonic signals were efficiently stored in a semiconductor-based memory cell. The incident photons were converted to electron-hole pairs that were locally stored in a quantum well that was laterally modulated by a field-effect tunable electrostatic superlattice. At large superlattice potential amplitudes, these pairs were stored for a time that was at least five orders of magnitude longer than their natural lifetime. At an arbitrarily chosen time, they were released in a short and intense flash of incoherent light, which was triggered by flattening the superlattice amplitude.