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Chinese Physics Letters

Photon—Storage in Optical Memory Cells Based on a Semiconductor Quantum Dot—Quantum Well Hybrid Structure

卞松保, 唐艳, 李桂荣, 李月霞, Fuhua Yang, 郑厚植, 曾一平

Published Jan 1, 2003• 1 citation
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Abstract

We report a new type of photonic memory cell based on a semiconductor quantum dot (QD)--quantum well (QW) hybrid structure, in which photo-generated excitons can be decomposed into separated electrons and holes, and stored in QW and QDs respectively. Storage and retrieval of photonic signals are verified by time-resolved photoluminescence experiments. A storage time in excess of l00ms has been obtained at a temperature of 10K while the switching speed reaches the order of ten megahertz.

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We report a new type of photonic memory cell based on a semiconductor quantum dot (QD)--quantum well (QW) hybrid structure, in which photo-generated excitons can be decomposed into separated electrons and holes, and stored in QW and QDs respectively. Storage and retrieval of photonic signals are verified by time-resolved photoluminescence experiments. A storage time in excess of l00ms has been obtained at a temperature of 10K while the switching speed reaches the order of ten megahertz.
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