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Journal of Yulin University

Theoretical Calculation of the Energy Transfer between Donor-receptor in Rare Earth Doped System

FU Zhen-xing

Published Jan 1, 2008• 0 citations
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Abstract

The energy transfer between donor-receptor in rare earth doped system is calculated by means of dynamic equation of energy transfer.The results show that the decay curve of luminescence of the donor does not exhibit exponent because the random distribution of receptors and the effect of the random distribution of receptors on the delay curve must be considered.

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The energy transfer between donor-receptor in rare earth doped system is calculated by means of dynamic equation of energy transfer.The results show that the decay curve of luminescence of the donor does not exhibit exponent because the random distribution of receptors and the effect of the random distribution of receptors on the delay curve must be considered.
An analysis is made of the transfer of the excitation energy between trivalent rare earth ions in crystals. The multipole interaction mechanisms are considered and allowances made for the migration of the excitation energy between donor ions. The proposed model is used in estimating the probabilities of elementary energy transfer events, diffusion coefficients of excitations, and concentrations of quenching centers in the case of several rare earth ions in Y3Al5O12. A comparison is made of the experimental and calculated concentration and temperature dependences of the transfer of the excitation energy between trivalent rare earth ions in Y3Al5O12 crystals; the agreement between the calculations and the experiment is good.
By Application of the V-F-B model which is obtained by combining the Vasquez-Flint (V-F) model for donor-acceptor energy transfer and the model of Burshtein for donor-donor energy migration, the experimental luminescence decay curves of 4S3/2 state of Er3+ in LaF3 at 295K for four different concentrations are re-simulated successfully.It is found that in this system the donor-acceptor interaction is dipole-dipole interaction,and that the donor-acceptor interaction constant CDA is 4.75×10-41cm6/s. The results are all in agreement with the previous results of Okamoto. However, the hopping time τ0 obtained from the above simulation in proportional to xD-1.237 (xD is the donor concentration), which is different from the theoretical dependence on the donor concentration (that is τ0∝xD-2). In addition, by considering donor-acceptor energy transfer and donor-donor energy migration within the V-F model at the same time, we obtain the estimated values of the hopping time τ0′ for four different concentrations, which are in reasonable agreement with the values of τ0 obtained from the above simulation.It seems that the V-F-B model is rather self-consistent.
Estimations are made of the critical concentration of energy-acceptor ions for which the average efficiency of the excitation transfer from energy-donor ions is 1/2. This gives a measure of the activator concentration at which Inokuti and Hirayama's theory is no longer applicable. Study is also made of the dominant multipole interaction responsible for the energy transfer between rare earth ions in inorganic solids. Finally, importance of the J -selection rule in the determination of the dominant interaction term in the resonance transfer and cooperative processes is emphasized.
In this work we have developed a kinetics model of energy transfer from the host lattice to the localized core excited states of rare-earth isoelectronic structured traps (REI traps). The presence of low-lying empty core orbitals in rare-earth impurities introduces new excitation and recombination phenomena. To adequately describe the energy transfer to a REI trap, the buildup and decay kinetics of rare-earth luminescence, we consider six separate states of the REI impurity (unoccupied, electron occupied, electron occupied excited, exciton occupied, excited electron occupied, and excited exciton occupied). The energy-transfer processes occur through an Auger mechanism where the recombination energy of the bound electron with a free hole is transferred nonradiatively to the core states, or energy can be transferred from the bound exciton on a REI trap to the core states. If the initial and final states are not resonant (in both mechanisms), the energy mismatch must be accommodated by emission or absorption of phonons. Furthermore we discuss details of several quenching processes, which are incorporated into the kinetics equations. We derive two sets of differential equations for semi-insulating and n-type semiconductors governing the kinetics of rare-earth luminescence. Equations have been solved by a numerical method to derive the time dependence of the rise and decay kinetics as a function of excitation intensity. The numerically simulated luminescence rise and decay times show a good overall quantitative agreement with experimental data obtained for InP:Yb, over a wide range of generation rates.