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Switching of Moderately-Damped Josephson Junctions

Paul A. Warburton

Published Jan 1, 2008• 0 citations
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The moderately damped regime in Josephson junctions (JJ) is quite common in devices characterized by low critical currents and, therefore, by low Josephson energies. Measurements of the switching current distribution (SCD) are a direct way of determining the phase dynamics in the nontrivial case of moderate damping, which is becoming more common with advances in nanopatterning superconductors and in materials science for fabricating hybrid systems. We report measurements of SCDs, in both the thermal and quantum regimes for moderately damped YBaCuO grain boundary biepitaxial JJs. A direct transition from a phase diffusion regime to macroscopic quantum tunnelling occurs at about 130 mK. The crossover to the quantum regime is determined by the magnetic field and the phase dynamics can be described by a fully consistent set of junction parameters obtained by numerical simulation.
We report on measurements of the switching current probability both in the thermal and quantum regime on moderately damped NbN/MgO/NbN Josephson junctions with very low critical current density (’ 2A/cm2). We observed three distinct regimes: below 90 mK the width of the switching distributions is constant within the experimental error, while from 90 mK to 1.6 K the width increases with temperature, this change of behavior signaling the standard transition from macroscopic quantum tunneling (MQT) to thermal activation (TA) regime respectively. Above 1.6 K we find effects of anti-correlation between the bath temperature and thermal fluctuations since the width of the histograms starts to collapse, and indications of a transition to a third regime called Phase Diffusion (PD) are evident, such as the change of the switching distributions symmetry. Experimental data have been analyzed through numerical fitting of the switching probability and Monte Carlo simulations, and we found a good agreement with theoretical expectations based on multiple re-trapping processes, which strongly depend on the junction damping. The parameters which completely characterize the dynamics of such moderately damped Josephson junctions have been also extracted.
We investigate the phase dynamics of moderately damped NbN/AlN/NbN Josephson junctions and we present experimental results on detailed aspects of phase diffusion processes. We measure both single escape and multiple escape and retrapping events obtaining a crossover temperature T* from Kramers to phase diffusion switching. We observe a clear dependence of the crossover temperature T* by the bias current ramp rate, while the damping factor Q remains the same. The measured effect is in strong agreement with theoretical predictions reported by Fenton and Warburton.