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International Conference Laser Optics (ICLO)

Raman spectroscopy investigation of alkene-based anti-relaxation coating

Oleg Tretiak, M. V. Balabas, Pavel K. Olshin

Published Jun 1, 2014• 0 citations
Publisher

Abstract

New alkene-based anti-relaxation coating of alkali metal vapor cell demonstrated up to 10 times longer relaxation time then the same time for classical alkane-based coating. In this paper the interaction of Cs vapor with the surface of the alkene in vacuum is studied by optical Raman spectroscopy. Isomerization of alkene (double bound of C=C moving to center) was found.

DOI
10.1109/lo.2014.6886414

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New alkene-based anti-relaxation coating of alkali metal vapor cell demonstrated up to 10 times longer relaxation time then the same time for classical alkane-based coating. In this paper the interaction of Cs vapor with the surface of the alkene in vacuum is studied by optical Raman spectroscopy. Isomerization of alkene (double bound of C=C moving to center) was found.
An alkene-based antirelaxation coating for alkali-metal vapor cells exhibiting Zeeman relaxation times up to 77 s was recently identified by Balabas et al. The long relaxation times, two orders of magnitude longer than in paraffin- (alkane-) coated cells, motivate revisiting the question of what the mechanism is underlying wall-collision-induced relaxation and renew interest in applications of alkali-metal vapor cells to secondary frequency standards. We measure the width and frequency shift of the ground-state hyperfine $m{}_{F}=0\ensuremath{\rightarrow}m{}_{F}^{\ensuremath{'}}=0$ transition (clock resonance) in vapor cells with 85{}^{85}85Rb and 87{}^{87}87Rb atoms, with an alkene antirelaxation coating. We find that the frequency shift is slightly larger than for paraffin-coated cells and that the Zeeman linewidth scales linearly with the hyperfine frequency shift.
We present an experimental investigation of alkali atom vapor cells coated with a high quality anti-relaxation coating material based on alkenes. The prepared cells with single compound alkene based coating showed the longest spin relaxation times which have been measured up to now with room temperature vapor cells. Suggestions are made that chemical binding of a cesium atom and an alkene molecule by attack to the C=C bond plays a crucial role in such improvement of anti-relaxation coating quality.
We present an experimental investigation of alkali atom vapor cells coated with a high quality anti-relaxation coating material based on alkenes. The prepared cells with single compound alkene based coating showed the longest spin relaxation times which have been measured up to now with room temperature vapor cells. Suggestions are made that chemical binding of a cesium atom and an alkene molecule by attack to the C = C bond plays a crucial role in such improvement of anti-relaxation coating quality.
Abstract Anti-relaxation surface coatings can reduce collisions between alkali-metal atoms and cell walls, thereby prolonging the spin-polarization lifetime of alkali-metal atoms. This phenomenon can considerably improve the performance of quantum sensors. Researchers have focused on the surface topography and composition of anti-relaxation coatings in alkali-metal vapor cells and on methods that provide an increase in the relaxation time of alkali metals. We proposed a novel method to characterise the coating performance of alkali-metal cells by directly measuring the energy dissipation during collisions between the anti-relaxation coating surface and atoms in the cell. We found that the interactions between alkali-metal atoms and the anti-relaxation coating resemble elastic collisions, which can be indirectly characterised by the energy dissipation during interactions between an atomic force microscopy tip and atoms. In addition, we confirmed that the energy dissipation between collisions is positively correlated with the relaxation characteristics of alkali metals at various temperatures. This discovery is of great significance as it can be utilised to characterise the anti-relaxation coating performance of alkali-metal cells by directly analysing the energy dissipation of anti-relaxation coatings instead of measuring the relaxation time.
Atomic vapor-cell quantum memories are key devices for quantum information science. Anti-relaxation coatings on the inner surface of the cell suppress ground-state dephasing caused by atom-wall collisions, thereby improving memory performance. Nevertheless, systematic performance comparisons of vapor-cell quantum memories with different anti-relaxation coatings under identical conditions remain limited. Here, we experimentally compare quantum-memory performance in cesium vapor cells with and without anti-relaxation coatings-uncoated, paraffin-coated, and alkene-coated-under otherwise identical conditions to assess coating-dependent effects. Using electromagnetically induced transparency (EIT) as the light storage protocol, we characterize transmission, memory efficiency, and storage lifetime. The alkene-coated cell yields the largest enhancement in retrieval efficiency-more than fourfold relative to the uncoated cell and more than twofold relative to the paraffin-coated cell-while exhibiting a modest (approximately 16%) increase in storage lifetime. These results provide a systematic benchmark for evaluating anti-relaxation coatings and for this instance, identify alkene coatings as an effective choice for improving retrieval efficiency in warm-vapor-cell memories.
We present a microfabricated alkali vapor cell equipped with an anti-relaxation wall coating. The anti-relaxation coating used is octadecyltrichlorosilane and the cell was sealed by thin-film indium-bonding at a low temperature of 140 °C. The cell body is made of silicon and Pyrex and features a double-chamber design. Depolarizing properties due to liquid Rb droplets are avoided by confining the Rb droplets to one chamber only. Optical and microwave spectroscopy performed on this wall-coated cell are used to evaluate the cell's relaxation properties and a potential gas contamination. Double-resonance signals obtained from the cell show an intrinsic linewidth that is significantly lower than the linewidth that would be expected in case the cell had no wall coating but only contained a buffer-gas contamination on the level measured by optical spectroscopy. Combined with further experimental evidence this proves the presence of a working anti-relaxation wall coating in the cell. Such cells are of interest for applications in miniature atomic clocks, magnetometers, and other quantum sensors.